A replacement gate process employing a HfN dummy gate and sub-1-nm equivalent oxide
thickness (EOT) HfO/sub 2/gate dielectric is demonstrated. The excellent thermal stability of …

In this letter, a thermally stable and high-quality HfN-HfO/sub 2/gate stack for advanced MOS
applications is reported for the first time. Negligible changes in both equivalent oxide …

We report for the first time a thermally stable and high quality HfN/HfO2 gate stack for
advanced CMOS applications. Due to the superior oxygen diffusion barrier of HfN as well as …

A systematic study of thermally robust HfN metal gate on conventional SiO/sub 2/and
HfO/sub 2/high-/spl kappa/dielectrics for advanced CMOS applications is presented. Both …

High quality gate stacks with 0.65 nm of the equivalent oxide thickness and at of the gate
leakage have been demonstrated. An-based Si-surface nitridation process was performed …

The effects of nitrogen concentration on the material and electrical properties of HfO/sub
x/N/sub y/gate dielectrics were investigated. Higher concentration of nitrogen provides better …

We report for the first time on a novel dual-metal gate CMOS integration on HfO/sub 2/gate
dielectric using TiN (PMOS) and TaSiN (NMOS) gate electrodes. Compared to a single …

As the MOSFET gate lengths are scaled down to 50 nm or below, the expected increase in
gate leakage will be countered by the use of a high dielectric constant (high K) material. The …

In this paper, we demonstrate for the first time CMOS thin-film metal gate FDSOI devices
using HfO/sub 2/gate dielectric at the 50-nm physical gate length. Symmetric V/sub T/is …

For the first time, we integrated poly-Si gate CMOSFETs with nitrogen incorporated HfO/sub
2/-Al/sub 2/O/sub 3/laminate (HfAlON) as gate dielectrics. Both low gate leakage currents …