21-dB gain ultra-wideband complementary metal–oxide semiconductor low-noise amplifier with current-reuse technique
JH Ham, JY Lee, TY Yun - IET microwaves, antennas & propagation, 2011 - IET
A high-gain and wideband low-noise amplifier (LNA) employing a current-reuse technique is
proposed. The current-reuse technique adopted at the first stage yields an exceptionally …
proposed. The current-reuse technique adopted at the first stage yields an exceptionally …
A 0.6 V, low‐power and high‐gain ultra‐wideband low‐noise amplifier with forward‐body‐bias technique for low‐voltage operations
A two‐stage common‐source (CS) low‐noise amplifier (LNA) that uses a forward‐body‐bias
technique in N‐type metal–oxide semiconductor devices and intended to achieve a high …
technique in N‐type metal–oxide semiconductor devices and intended to achieve a high …
Ultra‐wideband complementary metal‐oxide semiconductor low noise amplifier using CS‐CG noise‐cancellation and dual resonance network techniques
M Hayati, F Daryabari… - IET Circuits, Devices & …, 2020 - Wiley Online Library
In this paper, a low power ultra‐wideband (UWB) low noise amplifier (LNA) with high and
flatvoltage gain is proposed using CS‐CG noise‐cancellation and dual resonancenetwork …
flatvoltage gain is proposed using CS‐CG noise‐cancellation and dual resonancenetwork …
A low-power 3.1–10.6 GHz ultra-wideband CMOS low-noise amplifier with common-gate input stage
NJ Oh - Current Applied Physics, 2011 - Elsevier
A low-power ultra-wideband (UWB) low-noise amplifier (LNA) is proposed exploiting a
current-reused technique operating in the frequency range of 3.1–10.6 GHz. The technique …
current-reused technique operating in the frequency range of 3.1–10.6 GHz. The technique …
High‐Gain Wideband CMOS Low Noise Amplifier with Two‐Stage Cascode and Simplified Chebyshev Filter
SS Kim, YS Lee, TY Yun - ETRI journal, 2007 - Wiley Online Library
An ultra‐wideband low‐noise amplifier is proposed with operation up to 8.2 GHz. The
amplifier is fabricated with a 0.18‐μm CMOS process and adopts a two‐stage cascode …
amplifier is fabricated with a 0.18‐μm CMOS process and adopts a two‐stage cascode …
A 2.8–10-GHz CMOS current reuse cascaded linearity improving ultra-wideband low-noise amplifier
JD Chen, ZX Chen - Circuits, Systems, and Signal Processing, 2023 - Springer
This study presents a wideband low-noise amplifier (LNA) chip that covers the frequency
range of 2.8–10 GHz using UMC's 0.18 μm complementary metal–oxide–semiconductor …
range of 2.8–10 GHz using UMC's 0.18 μm complementary metal–oxide–semiconductor …
A 5.4–9.2 GHz 19.5 dB Complementary Metal–Oxide–Semiconductor Ultrawide-Band Receiver Front-End Low-Noise Amplifier
In this work, we present an ultrawide-band (UWB) complementary metal–oxide–
semiconductor (CMOS) low-noise amplifier (LNA) for wireless communication in the upper …
semiconductor (CMOS) low-noise amplifier (LNA) for wireless communication in the upper …
A 3.1–10.6 GHz ultra-wideband CMOS low noise amplifier with current-reused technique
YJ Lin, SSH Hsu, JD Jin… - IEEE Microwave and …, 2007 - ieeexplore.ieee.org
A 3.1-10.6 GHz ultra-wideband (UWB) low noise amplifier (LNA) utilizing a current-reused
technique and a simple high-pass input matching network is proposed. The implemented …
technique and a simple high-pass input matching network is proposed. The implemented …
6.7–15.3 GHz, high-performance broadband low-noise amplifier with large transistor and two-stage broadband noise matching
This letter presents a fully integrated wideband, ultralow average noise figure (NF), low
power consumption, compact, and electrostatic discharge protected 6.7-15.3-GHz low-noise …
power consumption, compact, and electrostatic discharge protected 6.7-15.3-GHz low-noise …
A 0.4-V low noise amplifier using forward body bias technology for 5 GHz application
D Wu, R Huang, W Wong… - IEEE Microwave and …, 2007 - ieeexplore.ieee.org
A fully integrated low noise amplifier (LNA) suitable for ultra low voltage and ultra low power
applications is proposed and demonstrated in 0.13 μ m CMOS technology. In order to meet …
applications is proposed and demonstrated in 0.13 μ m CMOS technology. In order to meet …