We studied the nucleation and growth of hexagonal BN (h-BN) on AlN template on c-plane
sapphire by metalorganic vapor phase epitaxy as functions of growth temperature …

The substrate is one of the key components that determines the quality of the epitaxial
layers. However, the implications of growing two-dimensional layers on three-dimensional …

Van der Waals heterostructures based on hexagonal boron nitride (h-BN) and other 2D
materials may pave the way for future electronic applications. Wafer-scale uniform h-BN …

Multilayer hexagonal boron nitride (h-BN) is highly desirable as a dielectric substrate for the
fabrication of two-dimensional (2D) electronic and optoelectronic devices. However, the …

A few-layer hexagonal boron nitride (h-BN) films with wafer-scale thickness uniformity were
grown by using a multiwafer metal–organic chemical vapor deposition (MOCVD) system at …

We demonstrate wafer-scale growth of high-quality hexagonal boron nitride (h-BN) film on
Ni (111) template using metal-organic chemical vapor deposition (MOCVD). Compared with …

Due to its outstanding stability, flat surface, and wide band gap, two-dimensional hexagonal
boron nitride (h-BN) has appeared as a vital element in a range of applications, including a …

Hexagonal boron nitride (h-BN) has recently become a promising and popular material due
to its wide applications, such as deep ultraviolet optoelectronic devices, novel nonvolatile …

Chemical vapor deposition (CVD) synthesis of large-domain hexagonal boron nitride (h-BN)
with a uniform thickness is very challenging, mainly due to the extremely high nucleation …

The outstanding physical properties of 2D materials have sparked continuous research
interest in exploiting these materials for next‐generation high‐performance electronic and …