Limitations and challenges of multigigabit DRAM chip design

K Itoh, Y Nakagome, S Kimura… - IEEE Journal of Solid …, 1997 - ieeexplore.ieee.org
This paper describes the limitations and challenges involved in designing gigabit DRAM
chips in terms of high-density devices, high-performance circuits, and low-power/low-voltage …

[图书][B] DRAM circuit design: fundamental and high-speed topics

B Keeth, RJ Baker, B Johnson, F Lin - 2007 - books.google.com
A modern, comprehensive introduction to DRAM for students and practicing chip designers
Dynamic Random Access Memory (DRAM) technology has been one of the greatestdriving …

High-speed, high-reliability circuit design for megabit DRAM

P Gillingham, RC Foss, V Lines… - IEEE journal of solid …, 1991 - ieeexplore.ieee.org
Circuit techniques for improving the speed and reliability of submicrometer geometry CMOS
DRAMs are described. Double-bootstrap voltages are eliminated with an internal voltage …

DRAM technology perspective for gigabit era

K Kim, CG Hwang, JG Lee - IEEE Transactions on Electron …, 1998 - ieeexplore.ieee.org
Many challenges emerge as the DRAM enters into a generation of the gigabit density era.
Most of the challenges come from the shrink technology which scales down minimum …

Fine-grained activation for power reduction in DRAM

E Cooper-Balis, B Jacob - IEEE Micro, 2010 - ieeexplore.ieee.org
This DRAM architecture optimization, which appears transparent to the memory controller,
significantly reduces power consumption. With trivial additional logic, using the posted-CAS …

A cost effective embedded DRAM integration for high density memory and high performance logic using 0.15/spl mu/m technology node and beyond

D Ha, D Shin, GH Koh, J Lee, S Lee… - … on Electron Devices, 2000 - ieeexplore.ieee.org
In this paper, a 0.15/spl mu/m embedded DRAM technology is described which provides a
cost-effective means of delivering high bandwidth, low power consumption, noise immunity …

Trends in megabit DRAM circuit design

K Itoh - IEEE Journal of Solid-State Circuits, 1990 - ieeexplore.ieee.org
The state of the art in megabit dynamic random access memory (DRAM) circuit and chip
design is reviewed in terms of essential design parameters such as signal-to-noise ratio …

A 1 gb 2 ghz 128 gb/s bandwidth embedded dram in 22 nm tri-gate cmos technology

F Hamzaoglu, U Arslan, N Bisnik… - IEEE Journal of Solid …, 2014 - ieeexplore.ieee.org
An embedded DRAM (eDRAM) integrated into 22 nm CMOS logic technology using tri-gate
high-k metal gate transistor and MIM capacitor is described. A 1 Gb eDRAM die is designed …

A 20-ns 128-kbit* 4 high speed DRAM with 330-Mbit/s data rate

NCC Lu, HH Chao, W Hwang… - IEEE journal of solid …, 1988 - ieeexplore.ieee.org
The authors describe a high-speed DRAM (HSDRAM), designed primarily for high
performance, while retaining the density advantage of the one-transistor DRAM cell. The …

Development of single-chip multi-GB/s DRAMs

R Crisp, K Donnelly, A Moncayo… - … Solids-State Circuits …, 1997 - ieeexplore.ieee.org
Discusses improvement of current device jitter budget. A DRAM incorporating these
improvements is expected to operate with 1.3 Gb/s/pin signaling rate (650MHz clock rate) …