Gate-Tunable WSe2/SnSe2 Backward Diode with Ultrahigh-Reverse Rectification Ratio
Backward diodes conduct more efficiently in the reverse bias than in the forward bias,
providing superior high-frequency response, temperature stability, radiation hardness, and …
providing superior high-frequency response, temperature stability, radiation hardness, and …
Versatile Electronic Devices Based on WSe2/SnSe2 Vertical van der Waals Heterostructures
W Li, X Xiao, H Xu - ACS applied materials & interfaces, 2019 - ACS Publications
Van der Waals heterostructures formed by stacking of various two-dimensional materials are
promising in electronic applications. However, the performances of most reported electronic …
promising in electronic applications. However, the performances of most reported electronic …
Tunable SnSe2/WSe2 Heterostructure Tunneling Field Effect Transistor
The burgeoning 2D semiconductors can maintain excellent device electrostatics with an
ultranarrow channel length and can realize tunneling by electrostatic gating to avoid …
ultranarrow channel length and can realize tunneling by electrostatic gating to avoid …
Fermi‐Level Pinning‐Free WSe2 Transistors via 2D Van der Waals Metal Contacts and Their Circuits
Precise control over the polarity of transistors is a key necessity for the construction of
complementary metal–oxide–semiconductor circuits. However, the polarity control of 2D …
complementary metal–oxide–semiconductor circuits. However, the polarity control of 2D …
Bidirectional rectifier with gate voltage control based on Bi2O2Se/WSe2 heterojunction
R Li, F Lu, J Deng, X Fu, W Wang… - Journal of …, 2024 - iopscience.iop.org
Abstract Two-dimensional (2D) WSe 2 has received increasing attention due to its unique
optical properties and bipolar behavior. Several WSe 2-based heterojunctions exhibit …
optical properties and bipolar behavior. Several WSe 2-based heterojunctions exhibit …
High Voltage Gain WSe2 Complementary Compact Inverter With Buried Gate for Local Doping
D Wan, B Jiang, H Huang, C Chen… - IEEE Electron …, 2020 - ieeexplore.ieee.org
Two-dimensional (2D) materials such as WSe 2 are potential for advanced electronics
because of their ultra-thin geometry and unique electrical properties. Herein, a simplified …
because of their ultra-thin geometry and unique electrical properties. Herein, a simplified …
An in-plane WSe 2 p–n homojunction two-dimensional diode by laser-induced doping
Conventional doping schemes of Si microelectronics are inadequate for atomic-thickness
two-dimensional (2D) semiconductors, which makes it challenging to construct 2D p–n …
two-dimensional (2D) semiconductors, which makes it challenging to construct 2D p–n …
Gate Tunable Self-Biased Diode Based on Few Layered MoS2 and WSe2
The operation of a self-biased diode (SBD) based on MoS2 has been demonstrated by
using an asymmetric top gate comprising metal-hexagonal boron nitride (h-BN)-MoS2 …
using an asymmetric top gate comprising metal-hexagonal boron nitride (h-BN)-MoS2 …
Doping-free complementary WSe2 circuit via van der Waals metal integration
Abstract Two-dimensional (2D) semiconductors have attracted considerable attention for the
development of ultra-thin body transistors. However, the polarity control of 2D transistors and …
development of ultra-thin body transistors. However, the polarity control of 2D transistors and …
Steep Slope p-type 2D WSe2 Field-Effect Transistors with Van Der Waals Contact and Negative Capacitance
Steep-slope p-type 2D WSe 2 back-gated field-effect transistors (FETs) are realized by using
van der Waals Pt-WSe 2 contact and HfZrO 2/Al 2 O 3 as the dielectric layer. The van der …
van der Waals Pt-WSe 2 contact and HfZrO 2/Al 2 O 3 as the dielectric layer. The van der …