Vertically stacked multi-heterostructures of layered materials for logic transistors and complementary inverters

WJ Yu, Z Li, H Zhou, Y Chen, Y Wang, Y Huang… - Nature materials, 2013 - nature.com
Graphene has attracted considerable interest for future electronics, but the absence of a
bandgap limits its direct applicability in transistors and logic devices. Recently, other layered …

Vertical field-effect transistor based on graphene–WS2 heterostructures for flexible and transparent electronics

T Georgiou, R Jalil, BD Belle, L Britnell… - Nature …, 2013 - nature.com
The celebrated electronic properties of graphene, have opened the way for materials just
one atom thick to be used in the post-silicon electronic era. An important milestone was the …

Large current modulation in exfoliated-graphene/MoS2/metal vertical heterostructures

R Moriya, T Yamaguchi, Y Inoue, S Morikawa… - Applied Physics …, 2014 - pubs.aip.org
Graphene-based vertical field effect transistors have attracted considerable attention in the
light of realizing high-speed switching devices; however, the functionality of such devices …

Field-effect transistors built from all two-dimensional material components

T Roy, M Tosun, JS Kang, AB Sachid, SB Desai… - ACS …, 2014 - ACS Publications
We demonstrate field-effect transistors using heterogeneously stacked two-dimensional
materials for all of the components, including the semiconductor, insulator, and metal layers …

Flexible integrated circuits and multifunctional electronics based on single atomic layers of MoS2 and graphene

M Amani, RA Burke, RM Proie, M Dubey - Nanotechnology, 2015 - iopscience.iop.org
Two-dimensional materials, such as graphene and its analogues, have been investigated by
numerous researchers for high performance flexible and conformal electronic systems …

Surface-Mediated Aligned Growth of Monolayer MoS2 and In-Plane Heterostructures with Graphene on Sapphire

K Suenaga, HG Ji, YC Lin, T Vincent, M Maruyama… - ACS …, 2018 - ACS Publications
Aligned growth of transition metal dichalcogenides and related two-dimensional (2D)
materials is essential for the synthesis of high-quality 2D films due to effective stitching of …

Transferred van der Waals metal electrodes for sub-1-nm MoS2 vertical transistors

L Liu, L Kong, Q Li, C He, L Ren, Q Tao, X Yang… - Nature …, 2021 - nature.com
Vertical transistors—in which the channel length is determined by the thickness of the
semiconductor—are of interest in the development of next-generation electronic devices …

Improved Electrical Contact Properties of MoS2‐Graphene Lateral Heterostructure

W Hong, GW Shim, SY Yang, DY Jung… - Advanced Functional …, 2019 - Wiley Online Library
Abstract 2D materials have been extensively investigated in view of their excellent
electrical/optical properties, with particular attention directed at the fabrication of vertical or …

Highly Tunable Carrier Tunneling in Vertical Graphene–WS2–Graphene van der Waals Heterostructures

Z Bai, Y Xiao, Q Luo, M Li, G Peng, Z Zhu, F Luo… - ACS …, 2022 - ACS Publications
Owing to the fascinating properties, the emergence of two-dimensional (2D) materials brings
various important applications of electronic and optoelectronic devices from field-effect …

Low-voltage complementary electronics from ion-gel-gated vertical van der Waals heterostructures

Y Choi, J Kang, D Jariwala, MS Kang, TJ Marks… - Advanced Materials, 2016 - osti.gov
Graphene has attracted significant attention for high performance electronics due to its
superior electronic and physical properties. Yet, the absence of a band gap and the resulting …