KE Aretouli, D Tsoutsou, P Tsipas… - … applied materials & …, 2016 - ACS Publications
van der Waals heterostructures of 2D semiconductor materials can be used to realize a number of (opto) electronic devices including tunneling field effect devices (TFETs). It is …
G Murastov, MA Aslam, S Leitner, V Tkachuk… - Nanomaterials, 2024 - mdpi.com
Tungsten diselenide (WSe 2) has emerged as a promising ambipolar semiconductor material for field-effect transistors (FETs) due to its unique electronic properties, including a …
Precise doping-profile engineering in van der Waals heterostructures is a key element to promote optimal device performance in various electrical and optical applications with two …
S Fan, SJ Yun, WJ Yu, YH Lee - Advanced Science, 2020 - Wiley Online Library
Abstract 2D van der Waals layered heterostructures allow for a variety of energy band offsets, which help in developing valuable multifunctional devices. However, p–n diodes …
A Abderrahmane, C Woo, PJ Ko - Journal of Materials Science: Materials …, 2022 - Springer
In this study, we report the fabrication of WSe2/SnSe2/WSe2 van der Waals (vdW) heterostructures for potential applications as tunnel field-effect transistors (TFETs), bipolar …
S Yang, M Wu, B Wang, LD Zhao… - … applied materials & …, 2017 - ACS Publications
van der Waals heterojunctions formed by stacking various two-dimensional (2D) materials have a series of attractive physical properties, thus offering an ideal platform for versatile …
Y Kashiwabara, M Nakano, Y Nakagawa… - Advanced Functional …, 2019 - Wiley Online Library
Emergent properties of 2D materials attract considerable interest in condensed matter physics and materials science due to their distinguished features that are missing in their …
X Zhou, N Zhou, C Li, H Song, Q Zhang, X Hu… - 2D …, 2017 - iopscience.iop.org
Van der Waals heterostructures from atomically thin 2D materials have opened up new realms in modern semiconductor industry. Recently, 2D layered semiconductors such as …
The burgeoning 2D semiconductors can maintain excellent device electrostatics with an ultranarrow channel length and can realize tunneling by electrostatic gating to avoid …