We have investigated microstructural changes in self‐implanted and arsenic‐ion‐implanted
amorphous silicon layers as a function of energy density after pulsed ruby laser irradiation …

The effects of pulsed (Q‐switched) ruby‐laser annealing of arsenic‐and antimony‐implanted
silicon (1× 1015 to∼ 2× 1016 cm− 2) has been studied by Rutherford ion backscattering …

Microstructural changes and impurity redistribution have been studied in 30Si+‐, 75As+‐,
63Cu+‐, and 115In+‐implanted, laser‐annealed amorphous silicon layers for various pulse …

The time evolution of temperature and melting in amorphous silicon layers laser irradiated
was calculated numerically. Experiments were performed in Si crystals implanted with 4OO …

Amorphized Si has been irradiated using a 7.5-ns frequency-doubled neodymium: yttrium
aluminum garnet laser. For low energy density pulses, time-resolved reflectivity …

The technique of ion implantation in semiconductors for device fabrication is accompanied
by radiation damage. Conventionally, thermal annealing has been employed to restore the …

We demonstrate the unique capability of a repetitively pulsed laser to''write''a
monocrystalline pattern in ion‐implanted amorphous silicon layers. Ion‐channeling data …

3000-A-thick epitaxial layers of< 1 (0) and< 111) silicon have been grown using a Q-
switched ruby laser. The initial amorphous silicon layers were formed bye-gun evaporation …

The time‐resolved reflectivity at 0.63 μm from arsenic‐implanted silicon crystals has been
measured during annealing by a 1.06‐μm laser pulse of 50‐ns duration. The reflectivity was …

Very short Q-switched laser pulses have been used to produce especially high-speed
crystal growth in ion implanted, amorphous Si layers. This is shown to occur in an unstable …