Cascaded Logic Gates Based on High-Performance Ambipolar Dual-Gate WSe2 Thin Film Transistors
Ambipolar dual-gate transistors based on low-dimensional materials, such as graphene,
carbon nanotubes, black phosphorus, and certain transition metal dichalcogenides (TMDs) …
carbon nanotubes, black phosphorus, and certain transition metal dichalcogenides (TMDs) …
Frequency doubler and universal logic gate based on two-dimensional transition metal dichalcogenide transistors with low power consumption
Two-dimensional transition metal dichalcogenide semiconductors are very promising
candidates for future electronic applications with low power consumption due to a low …
candidates for future electronic applications with low power consumption due to a low …
Dual-Channel WS2/WSe2 Heterostructure with Tunable Graphene Electrodes
H Kim, J Kim, I Uddin, NAN Phan… - ACS Applied …, 2023 - ACS Publications
Two-dimensional semiconductor heterostructures provide significant research potential for
electronic and optoelectronic applications because of their scaled thickness, pristine …
electronic and optoelectronic applications because of their scaled thickness, pristine …
High-Mobility Holes in Dual-Gated WSe2 Field-Effect Transistors
We demonstrate dual-gated p-type field-effect transistors (FETs) based on few-layer
tungsten diselenide (WSe2) using high work-function platinum source/drain contacts and a …
tungsten diselenide (WSe2) using high work-function platinum source/drain contacts and a …
Large-Scale Complementary Logic Circuit Enabled by Al2O3 Passivation-Induced Carrier Polarity Modulation in Tungsten Diselenide
T Das, S Youn, JE Seo, E Yang… - ACS Applied Materials & …, 2023 - ACS Publications
Achieving effective polarity control of n-and p-type transistors based on two-dimensional
(2D) materials is a critical challenge in the process of integrating transition metal …
(2D) materials is a critical challenge in the process of integrating transition metal …
WSe2 Homojunction Devices: Electrostatically Configurable as Diodes, MOSFETs, and Tunnel FETs for Reconfigurable Computing
In this paper, electrostatically configurable 2D tungsten diselenide (WSe2) electronic
devices are demonstrated. Utilizing a novel triple‐gate design, a WSe2 device is able to …
devices are demonstrated. Utilizing a novel triple‐gate design, a WSe2 device is able to …
Reconfigurable Complementary Monolayer MoTe2 Field-Effect Transistors for Integrated Circuits
Transition metal dichalcogenides are of interest for next generation switches, but the lack of
low resistance electron and hole contacts in the same material has hindered the …
low resistance electron and hole contacts in the same material has hindered the …
Graphene–transition metal dichalcogenide heterojunctions for scalable and low-power complementary integrated circuits
The most pressing barrier for the development of advanced electronics based on two-
dimensional (2D) layered semiconductors stems from the lack of site-selective synthesis of …
dimensional (2D) layered semiconductors stems from the lack of site-selective synthesis of …
High performance top-gated multilayer WSe2 field effect transistors
PR Pudasaini, MG Stanford, A Oyedele… - …, 2017 - iopscience.iop.org
In this paper, high performance top-gated WSe 2 field effect transistor (FET) devices are
demonstrated via a two-step remote plasma assisted ALD process. High-quality, low …
demonstrated via a two-step remote plasma assisted ALD process. High-quality, low …
Doping-free complementary logic gates enabled by two-dimensional polarity-controllable transistors
Atomically thin two-dimensional (2D) materials belonging to transition metal
dichalcogenides, due to their physical and electrical properties, are an exceptional vector for …
dichalcogenides, due to their physical and electrical properties, are an exceptional vector for …