A 0.18 μm CMOS 3–5 GHz broadband flat gain low noise amplifier
F Lisong, H Lu, B Xuefei, X Tianzuo - Journal of Semiconductors, 2010 - iopscience.iop.org
A 3–5 GHz broadband flat gain differential low noise amplifier (LNA) is designed for the
impulse radio ultra-wideband (IR-UWB) system. The gain-flatten technique is adopted in this …
impulse radio ultra-wideband (IR-UWB) system. The gain-flatten technique is adopted in this …
A 1.8 GHz CMOS low-noise amplifier
CJ Debono, F Maloberti… - ICECS 2001. 8th IEEE …, 2001 - ieeexplore.ieee.org
A 1.8 GHz CMOS low-noise amplifier Page 1 A 1.8 GHz CMOS Low-Noise Amplifier Carl
James Debono, Franco Maloberti* and Joseph Micallef Department of Microelectronics …
James Debono, Franco Maloberti* and Joseph Micallef Department of Microelectronics …
6.5 mW CMOS low noise amplifier at 1.9 GHz
S Yang, R Mason, C Plett - 1999 IEEE International …, 1999 - ieeexplore.ieee.org
A 1.9 GHz low noise amplifier has been designed in a standard CMOS. 35 micron process.
The amplifier provides a gain of 21 dB with a noise figure only 1.4 dB while drawing 6.5 mW …
The amplifier provides a gain of 21 dB with a noise figure only 1.4 dB while drawing 6.5 mW …
A 1.5-V, 2.4 GHz CMOS low-noise amplifier
A 2.4 GHz low noise amplifier has been designed in a standard CMOS 0.35 um process.
The transistor model is Bsim3 for 0.35 um process. The amplifier provides a forward gain of …
The transistor model is Bsim3 for 0.35 um process. The amplifier provides a forward gain of …
A 11.2 mW 48–62 GHz low noise amplifier in 65 nm CMOS technology
XP Yu, WL Xu, C Feng, ZH Lu, WM Lim… - Circuits, Systems, and …, 2016 - Springer
In this paper, a wideband low noise amplifier (LNA) for 60 GHz wireless applications is
presented. A single-ended two-stage cascade topology is utilized to realize an ultra …
presented. A single-ended two-stage cascade topology is utilized to realize an ultra …
Design and implementation of a 1–5 GHz UWB low noise amplifier in 0.18 μm CMOS
M Shen, T Tong, JH Mikkelsen, OK Jensen… - … Integrated Circuits and …, 2011 - Springer
This paper presents a compact two-stage ultra-wideband low-noise amplifier (LNA). A
common-gate topology is adopted for the input stage to achieve wideband input matching …
common-gate topology is adopted for the input stage to achieve wideband input matching …
A fully-integrated low-power 3.1-10.6 GHz uwb lna in 0.18 μm CMOS
Ultra wideband (UWB) radio technology has many advantages: ie, ultra wide 7.5 GHz
spectrum bandwidth, extremely high throughput, very low power, etc. This paper presents a …
spectrum bandwidth, extremely high throughput, very low power, etc. This paper presents a …
A 1. 5 GHz CMOS Low Noise Amplifier
R Fujimoto, S Otaka, H Iwai… - IEICE transactions on …, 1998 - search.ieice.org
A 1. 5 GHz low noise amplifier (LNA) was designed and fabricated by using CMOS
technology. The measured associated gain (G a) of the LNA is 13. 8 dB, the minimum noise …
technology. The measured associated gain (G a) of the LNA is 13. 8 dB, the minimum noise …
A 54.4–90 GHz low-noise amplifier in 65-nm CMOS
Y Yu, H Liu, Y Wu, K Kang - IEEE Journal of Solid-State …, 2017 - ieeexplore.ieee.org
This paper proposes a transformer-based broadband low-noise amplifier (LNA) for
millimeter-wave application. The proposed LNA has four common-source stages. Three …
millimeter-wave application. The proposed LNA has four common-source stages. Three …
[引用][C] Comment on corrections to “a 1.5-V, 1.5-GHz CMOS low noise amplifier”
DK Shaeffer, TH Lee - IEEE journal of solid-state circuits, 2006 - ieeexplore.ieee.org
Comment on Corrections to “A 1.5-V, 1.5-GHz CMOS Low Noise Amplifier”
Page 1 IEEE JOURNAL OF SOLID-STATE CIRCUITS, VOL. 41, NO. 10, OCTOBER 2006 2359 …
Page 1 IEEE JOURNAL OF SOLID-STATE CIRCUITS, VOL. 41, NO. 10, OCTOBER 2006 2359 …