Thin layers of amorphous silicon (a-Si) were produced by noble gas ion implantation of
(100) substrates held at 77 K. Rutherford backscattering and channeling, and differential …

Crystallization has been studied in amorphous silicon layers produced by evaporation. The
crystalline fraction is deduced from conductivity measurements. Depending upon the …

It is well known that the heating of vacuum deposited amorphous silicon films above about
700 C produces an irreversible transformation to the crystalline state1, 2). Films deposited …

The behavior of amorphous Si in contact with Ag films and Ge in contact with Al films has
been studied at temperatures well below those at which any liquid phase is present. MeV …

Amorphous Si layers prepared by MeV Si implantation of (100) wafers have been studied by
scanning and isothermal calorimetry. A homogeneous heat release of 5.1±1.2 kJ/mole and …

Amorphous Si and Ge layers, produced by noble gas (Ar or Xe) implantation of single crystal
substrates, have been crystallized in a differential scanning calorimeter (DSC). The MeV …

Channeling effect measurements have been used to study the effect of impurities on the
epitaxial regrowth of amorphous silicon layers on single‐crystal silicon. Implantation was …

Amorphous Si layers have been melted by pulsed electron irradiation. Implanted As has
been used as a marker for determining melt duration. Systematic differences between As …

The regrowth of thin amorphous (a) silicon films, formed during ion implantation on the
surface of Si wafers, has been studied by many investigators. 1, 2, 3, 4, 5, 22 During …

CHANNELING EFFECT MEASUREMENTS OF THE RECRYSTALLIZATION OF
AMORPHOUS Si LAYERS ON CRYSTAL Si ~ Page 1 Volume 54A, number 2 PHYSICS …