The substrate is one of the key components that determines the quality of the epitaxial
layers. However, the implications of growing two-dimensional layers on three-dimensional …

We studied the nucleation and growth of hexagonal BN (h-BN) on AlN template on c-plane
sapphire by metalorganic vapor phase epitaxy as functions of growth temperature …

Van der Waals heterostructures based on hexagonal boron nitride (h-BN) and other 2D
materials may pave the way for future electronic applications. Wafer-scale uniform h-BN …

Epitaxial growth of ultrathin overlayers on solid substrate is critically dependent on the
surface structure, and in this work near‐surface doping is identified as another important …

A comparison of hexagonal boron nitride (hBN) layers grown by chemical vapor deposition
on C-plane (0001) versus A-plane (112̅0) sapphire (α-Al2O3) substrate is reported. The …

Hexagonal boron nitride is a promising material for many applications ranging from deep UV
emission to an ideal substrate for other two dimensional crystals. Although efforts towards …

This article reports on two-dimensional (2D) layered hexagonal BN (h-BN) grown on
sapphire by metalorganic vapor phase epitaxy (MOVPE). The highly oriented lattice and …

We have studied the epitaxy of few-layer hexagonal boron nitride (h-BN) by plasma-assisted
molecular beam epitaxy (MBE) using a low growth rate and nitrogen-rich condition. It has …

Hexagonal boron nitride (h-BN) epitaxial films were successfully grown on (0001) sapphire
substrate by metalorganic vapor phase epitaxy (MOVPE). BN films were grown using …

The growth and properties of hexagonal boron nitride (hBN) have recently attracted much
attention due to applications in graphene-based monolayer thick two dimensional (2D) …