Analysis and design of a fully integrated CMOS low‐noise amplifier for concurrent dual‐band receivers

YP Zhang, KW Chew, PF Wong - International Journal of RF …, 2006 - Wiley Online Library
This article thoroughly analyzes a concurrent dual‐band low‐noise amplifier (LNA) and
carefully examines the effects of both active and passive elements on the performance of the …

A fully integrated concurrent dual‐band CMOS low‐noise amplifier

YP Zhang, KW Chew, PF Wong… - Microwave and Optical …, 2003 - Wiley Online Library
This paper presents a fully integrated concurrent dual‐band CMOS low‐noise amplifier
(LNA). The LNA is implemented in a standard 0.18‐μm 6M1P CMOS process and is …

A 3‐mW concurrent 2.4/5.2‐GHz dual‐band low‐noise amplifier for WLAN applications in 0.18‐μm CMOS technology

TH Lee, YS Lin - Microwave and Optical Technology Letters, 2004 - Wiley Online Library
Abstract A concurrent 2.4/5.2‐GHz dual‐band monolithic low‐noise amplifier implemented
with a 0.18‐μm mixed‐signal CMOS technology is reported for the first time. This LNA only …

Design and analysis of a 1.1 and 2.4 GHz concurrent dual-band low noise amplifier for multiband radios

A Aneja, XJ Li, PHJ Chong - Aeu-international Journal of Electronics and …, 2021 - Elsevier
This paper presents the design and implementation of a dual-band low noise amplifier
(DBLNA) operating at 1.1 GHz and 2.4 GHz. The DBLNA employs a second-order dual-band …

A concurrent multiband CMOS low‐noise amplifier for 4G standard receivers

J Jung, J Choi - Microwave and Optical Technology Letters, 2014 - Wiley Online Library
In this article, a concurrent triple‐band low‐noise amplifier (LNA), which operates at 698–
800, 1920–2170, and 2300–2400 MHz, is designed for long‐term evolution …

Design of a fully integrated concurrent triple-band CMOS low noise amplifier

CF Jou, KH Cheng, ET Lu… - 2003 46th Midwest …, 2003 - ieeexplore.ieee.org
A fully integrated concurrent triple-band low noise amplifier (LNA) is designed and
presented in this paper. It has been fabricated using TSMC 0.25-/spl mu/m mixed-signal …

A sub-2 db nf dual-band cmos lna for cdma/wcdma applications

H Song, H Kim, K Han, J Choi, C Park… - IEEE Microwave and …, 2008 - ieeexplore.ieee.org
This letter presents the design and experimental results of a 1.8/2.14 GHz dual-band CMOS
low-noise amplifier (LNA), which is usable for code division multiple access and wideband …

A fully integrated dual‐band low‐noise amplifier for bluetooth and wireless LAN applications

M Shouxian, M Jianguo, Y Kiat Seng… - Microwave and Optical …, 2004 - Wiley Online Library
A fully integrated dual‐band low‐noise amplifier (LNA) implemented in a standard 0.18‐μm
1P6M CMOS process is presented in this paper. The LNA draws 12‐mA current from a 1.5‐V …

Design and analysis of 0.9 and 2.3‐GHz concurrent dual‐band CMOS LNA for mobile communication

AA Roobert, DGN Rani - International Journal of Circuit Theory …, 2020 - Wiley Online Library
A complementary metal‐oxide‐semiconductor (CMOS) dual‐band low‐noise amplifier
(LNA) for 2G/3G/4G mobile communications is presented. It operates at 0.9 and 2.3 GHz of …

A multi-band CMOS low noise amplifier for multi-standard wireless receivers

CW Ang, Y Zheng, CH Heng - 2007 IEEE International …, 2007 - ieeexplore.ieee.org
A novel multi-band low noise amplifier (LNA) that allows simultaneous reception of signals
from several wireless standards is designed and implemented using a 0.18-μm CMOS …