[HTML][HTML] High-fidelity patterning of AlN and ScAlN thin films with wet chemical etching
We report on the anisotropic wet etching of sputtered AlN and Sc 0.2 Al 0.8 N thin films. With
tetramethyl ammonium hydroxide at 80° C, the etch rates along the c-axis were 330 and 30 …
tetramethyl ammonium hydroxide at 80° C, the etch rates along the c-axis were 330 and 30 …
The influence of the AlN film texture on the wet chemical etching
D Chen, J Wang, D Xu, Y Zhang - Microelectronics Journal, 2009 - Elsevier
The influence of the aluminum nitride (AlN) film texture on the chemical etching in KOH
solution was invested. The AlN films with the different texture and crystal quality were …
solution was invested. The AlN films with the different texture and crystal quality were …
Selective electrochemical etching of epitaxial aluminum nitride thin film
Aluminum nitride (AlN) has an ultra-wide bandgap energy of 6.2 eV and is resistant to
chemical etching owing to its high chemical stability, making it intractable in the device …
chemical etching owing to its high chemical stability, making it intractable in the device …
Wet chemical etching of AlN in KOH solution
I Cimalla, C Foerster, V Cimalla, V Lebedev… - … status solidi c, 2006 - Wiley Online Library
In this work we investigated the influence of the AlN material quality on the etching rate in
KOH‐based solutions. Thus, AlN layers were deposited by three different methods on …
KOH‐based solutions. Thus, AlN layers were deposited by three different methods on …
Selective wet etching and hydrolysis of polycrystalline AlN films grown by metal organic chemical vapor deposition
A Constant, P Coppens, J Baele, H Ziad… - Materials Science in …, 2022 - Elsevier
Abstract Polycrystalline AlN grown on Si 3 N 4 by metal organic chemical vapor deposition is
found to be wet etched by EKC265™ polymer strip solution, in which the active component …
found to be wet etched by EKC265™ polymer strip solution, in which the active component …
Smooth etching of epitaxially grown AlN film by Cl2/BCl3/Ar-based inductively coupled plasma
Inductively coupled plasma dry etching of epitaxially grown aluminum nitride (AlN) film using
Cl 2/BCl 3/Ar mixture has been investigated. The etch rate of AlN increases significantly with …
Cl 2/BCl 3/Ar mixture has been investigated. The etch rate of AlN increases significantly with …
Wet chemical etching of AlN
JR Mileham, SJ Pearton, CR Abernathy… - Applied physics …, 1995 - pubs.aip.org
Single‐crystal AlN grown on Al2O3 is found to be wet etched by AZ400K photoresist
developer solution, in which the active component is KOH. The etching is thermally activated …
developer solution, in which the active component is KOH. The etching is thermally activated …
Selective etching of AlInN/GaN heterostructures for MEMS technology
An etching technology for the patterning of suspended GaN structures on lattice matched
AlInN sacrificial layers is studied. Selective dry RIE etching of GaN to AlInN is demonstrated …
AlInN sacrificial layers is studied. Selective dry RIE etching of GaN to AlInN is demonstrated …
Dry and wet etching of single-crystal AlN
The dry etching of high crystal quality c-plane AlN grown by metal organic chemical vapor
deposition was examined as a function of source and chuck power in inductively coupled …
deposition was examined as a function of source and chuck power in inductively coupled …
Metalorganic Chemical Vapor Deposition of AlN on High Degree Roughness Vertical Surfaces for MEMS Fabrication
K Bespalova, G Ross, S Suihkonen… - Advanced Electronic …, 2024 - Wiley Online Library
Aluminum nitride (AlN) grown on vertical surfaces can be utilized for the fabrication of
advanced piezoelectric microelectromechanical systems (MEMS). The in‐plane motion of …
advanced piezoelectric microelectromechanical systems (MEMS). The in‐plane motion of …