Design of Low‐Power and High‐Gain CMOS LNA with Current‐Reused Topology

S Wang, WJ Lin - Microwave and Optical Technology Letters, 2013 - Wiley Online Library
This article presents the design of low‐power and high‐gain X‐band CMOS low‐noise
amplifier (LNA) using a current‐reused (CR) topology. The proposed LNA is equivalent to a …

A fully integrated low voltage (0.5 V) X‐band CMOS low noise amplifier

B Liu, J Zhou, J Mao - Microwave and Optical Technology …, 2011 - Wiley Online Library
Abstract In this article, a 0.5 VX‐band low noise amplifier (LNA) composed of two common‐
source stages is designed and fabricated with 0.18 um CMOS technology. Based on the …

A low‐power V‐band CMOS low‐noise amplifier using current‐sharing technique

HY Yang, YS Lin, C Chen Chen - Microwave and Optical …, 2008 - Wiley Online Library
Abstract A low‐power‐consumption 53‐GHz (V‐band) low‐noise amplifier (LNA) using
standard 0.13 μm CMOS technology is reported. To achieve sufficient gain, this LNA is …

Ultra-low-power cascaded CMOS LNA with positive feedback and bias optimization

MT Lai, HW Tsao - IEEE Transactions on Microwave Theory …, 2013 - ieeexplore.ieee.org
<? Pub Dtl=""?> A novel circuit topology for a CMOS low-noise amplifier (LNA) is presented
in this paper. By employing a positive feedback technique at the common-source transistor …

A 2.3-7 GHz CMOS high gain LNA using CS-CS cascode with coupling C

H Park, S Lee, J Lee, S Nam - IEICE transactions on electronics, 2009 - search.ieice.org
A fully integrated CMOS wideband Low Noise Amplifier (LNA) operating over 2.3-7 GHz is
designed and fabricated using a 0.18 µm CMOS process. The proposed structure is a …

[PDF][PDF] An ultra low voltage ultra high gain CMOS LNA using forward body biasing technique

E Kargaran1a, G Nabovati, MR Baghbanmanesh… - 2011 - academia.edu
A fully integrated 1.5 GHz low noise amplifier suitable for ultra-low voltage applications is
designed and simulated in a standard 0.18 µm CMOS technology. Using the folded cascode …

AK‐band low‐noise amplifier in 0.18‐μm CMOS technology for SUB‐1‐V operation

JD Jin, SSH Hsu - Microwave and Optical Technology Letters, 2009 - Wiley Online Library
AK‐band low‐noise amplifier (LNA) was realized in a standard 0.18‐μm CMOS technology.
The cascaded common‐source configuration of four stages was adopted for low voltage …

Design of a 9 GHz CMOS low noise amplifier using gain‐enhanced technique

S Wang - Microwave and Optical Technology Letters, 2011 - Wiley Online Library
In this article, a 9 GHz low noise amplifier (LNA) using gain‐enhanced technique is
presented. The compact and high‐gain LNA with cascode topology is implemented in a …

A Low-Power Low-Noise -band LNA in 90-nm CMOS Process With Source Degeneration Technique

PH Huang, CS Chiu, GW Huang… - IEEE Microwave and …, 2023 - ieeexplore.ieee.org
This letter presents the design of a-band low-noise amplifier (LNA) using a four-stage
common-source (CS) architecture fabricated in a 90-nm CMOS process. The LNA employs …

A high gain and high linearity current‐reused CMOS LNA using modified derivative superposition technique with bulk‐bias control

R Dai, Y Zheng, H Zhu, W Kong… - Microwave and Optical …, 2014 - Wiley Online Library
This article presents the design of a 2.4 GHz low power high gain and high linearity current‐
reused CMOS low noise amplifier (LNA) using modified derivative superposition (MDS) …