Thermal atomic layer etching (ALE) of crystalline aluminum nitride (AlN) films was
demonstrated using sequential, self-limiting reactions with hydrogen fluoride (HF) and tin (II) …

Thermal atomic layer etching (ALE) of amorphous and crystalline aluminum nitride was
performed using sequential exposures of hydrogen fluoride (HF) or xenon difluoride (XeF2) …

The atomic layer etching (ALE) of AlF3 was demonstrated using sequential thermal
reactions with Sn (acac) 2 and hydrogen fluoride (HF) as the reactants. AlF3 ALE is the first …

Thermal Al2O3 atomic layer etching (ALE) can be performed using sequential, self-limiting
reactions with tin (II) acetylacetonate (Sn (acac) 2) and HF as the reactants. To understand …

Trimethylaluminum (TMA, Al (CH3) 3) was used as the metal precursor, together with HF, for
the atomic layer etching (ALE) of Al2O3 using sequential, self-limiting thermal reactions …

Conspectus Atomic layer control of semiconductor processing is needed as critical
dimensions are progressively reduced below the 10 nm scale. Atomic layer deposition …

A dramatic increase in the Al 2 O 3 atomic layer etching (ALE) rate versus time was
demonstrated using sequential, self-limiting exposures of hydrogen fluoride (HF) and …

Atomic layer etching (ALE) of Al2O3, HfO2, and ZrO2 was accomplished using sequential
exposures with hydrogen fluoride (HF) as the fluorination reagent and dimethylaluminum …

Thermal atomic layer etching (ALE) can be achieved with sequential, self-limiting surface
reactions. One mechanism for thermal ALE is based on fluorination and ligand-exchange …

Thermal etching of AlF 3 with dimethyl-aluminum chloride (DMAC) and thermal isotropic
atomic layer etching (ALE) of Al 2 O 3 with alternating anhydrous hydrogen fluoride (HF) and …