Previous studies have shown that spectral analysis based on force data can elucidate
fundamental physical phenomena during chemical mechanical planarization (CMP). While it has …

We define a new scientific method, based on experimental and simulation data, for accurately
determining instantaneous removal rates (i-RRs) during tungsten and copper chemical …

We compared the long-term wear performance of 2 different PPS retaining ring materials (E-PPS
and O-PPS) provided by 2 different suppliers. After 4 h of wear, O-PPS resulted in …

A fully transient material removal model is described and applied to data from a blanket
copper wafer polishing experiment. The model predicts that copper removal is primarily …

A novel add-on hardware device is placed near the point of slurry dispense that can
instantaneously activate slurry performance during polishing via megasonic irradiation. This new …

The evolution of coefficient of friction and removal rate during 8.5 hours of tungsten chemical
mechanical planarization is correlated to pad surface topography via a novel pad surface …

In this study, slurry availability and the extent of the slurry mixing (ie, among fresh slurry,
spent slurry, and residual rinse-water) were varied via three different injection schemes. An …

The evolution of coefficient of friction (COF) and removal rate (RR) during 8.5 h of tungsten
CMP is correlated to pad surface topography via a novel pad surface descriptor termed'pad …

Material removal rate, coefficient of friction, shear force and variance of shear force of pure
and contaminated slurries are studied using spectral analysis of the frictional force. Larger …

Material removal rate, shear force and variance of shear force during copper polishing are
studied as a function of pad conditioning scheme: 0% in situ conditioning (ie, basically the …