The nonsteady‐state generalization of the laser current‐voltage and power characteristic
model is obtained and used to derive the small‐signal systems of equations for first‐and …

In most semiconductor injection lasers the optical cavity is formed by polishing or cleaving
the ends of the crystal containing the junction. The resonance frequency for an axial mode of …

The possibility of carrier charge imbalance in the active region of quantum well lasers is
demonstrated (in contrast to the usual presumption of charge neutrality in the region), and …

The method of external optical coupling was used for the estimation of the energy
dependence of the internal optical losses in injection lasers of different types. It is shown that …

A microscopic approach to semiconductor injection laser dynamics is discussed to
investigate the amplitude modulation with a small current signal in semiconductor lasers. An …

Light and voltage noise in AlxGa1–xAs–GaAs heterolasers are studied in a wide range of
forward currents (i= 10− 7 to 4 A) and frequencies (f= 1 to 107 Hz). The noise characteristics …

An analytical model is developed for the carrier density distribution and the associated
Dember type electric field/voltage in the waveguide layer of a high-power semiconductor …

The results of numerical simulation of the current dependence of the efficiency of injection
into the active area of a laser based on separate-confinement double heterostructures are …

The radiation emitted by a GaAs homojunction laser, emitting a single frequency of 50 mW
power when the threshold was exceeded significantly, was modulated directly by a …

An investigation was made of the dependence of the threshold current density and of the
differential quantum efficiency of AlAs-GaAs heterojunction lasers on the width of the active …