Trapping of photocarriers in Ga‐doped Bi12GeO20 at 80 K

D Bloom, SWS McKeever - Journal of applied physics, 1995 - pubs.aip.org
Data from measurements of optical absorption, photoconductivity, dark conductivity,
thermally stimulated conductivity (TSC), and thermoluminescence (TL) on samples of …

Trap level spectroscopy of undoped and Ga‐doped Bi12GeO20 using thermally stimulated conductivity

D Bloom, SWS McKeever - Journal of applied physics, 1995 - pubs.aip.org
The analysis of thermally stimulated conductivity (TSC) measurements performed on
''pure''Bi12GeO20 (BGO) and BGO doped with gallium is presented. The TSC data show …

Characterization of deep levels in Bi12GeO20 by photoinduced current transient spectroscopy

N Benjelloun, M Tapiero, JP Zielinger… - Journal of applied …, 1988 - pubs.aip.org
A systematic investigation of deep levels in undoped and doped (Fe, Fe/V, excess of Bi)
single crystals of Bi12 GeO20 (BGO) has been performed by photoinduced current transient …

Thermally stimulated luminescence in undoped and doped Bi12GeO20 single crystals

S Denagbe, M Martinaud, M Schvoerer… - Journal of Physics and …, 1990 - Elsevier
Abstract Single crystals of Bi 12 GeO 20 were grown large and of good optical quality. The
thermally stimulated luminescence (TSL) of Bi 12 GeO 20 was studied in the 300–700 K …

Transport Processes of Photoinduced Carriers in Bismuth Germanium Oxide (Bi12GeO20)

GG Douglas, RN Zitter - Journal of Applied Physics, 1968 - pubs.aip.org
This paper describes some investigations aimed at understanding the transport processes of
excess carriers in bismuth germanium oxide (Bi12GeO20). Spectral photoconductive …

[引用][C] Thermally Stimulated Currents and Luminescence in Bi12SiO20 and Bi12GeO20

RB Lauer - Journal of Applied Physics, 1971 - pubs.aip.org
Because of their potential for use in electro-optic devices Bh2GeO. o and Bi,. Si02o have
attracted a great deal of attention. H Most of these studies were aimed at understanding their …

Carrier transport and current oscillation in Bi12GeO20 in the ``relaxation semiconductor regime''

H Hayakawa, Y Yoshisato, N Mikoshiba - Journal of Applied Physics, 1973 - pubs.aip.org
New transport and low‐frequency current oscillation phenomena have been observed in a
photoexcited Bi12GeO20 single crystal in the temperature range 77–110 K. These …

Properties of Pure and Doped Bi12GeO2oand Bi12SiO20 Crystals

BC Grabmaier, R Oberschmid - physica status solidi (a), 1986 - Wiley Online Library
Abstract Bi12GeO20 (BGO) and Bi12SiO20 (BSO) single crystals doped with Al, Ga, P, Pb,
Or, Nd, Zn, Fe, and Eu are grown from the melt in good optical quality. The segregation …

Defect characterization in Bi12GeO20 single crystals by thermoluminescence

S Delice, M Isik, N Sarigul, NM Gasanly - Journal of Luminescence, 2021 - Elsevier
Bi 12 GeO 20 single crystal grown by Czochralski method was investigated in terms of
thermoluminescence (TL) properties. TL experiments were performed for various heating …

Conductivity Instabilities and Polarization Effects of Bi12(Ge, Si) O20 single‐Crystal Samples

R Oberschmid - physica status solidi (a), 1985 - Wiley Online Library
When subjected to measurements of temperature‐dependent dark conductivity and
thermally stimulated currents, undoped and lightly doped Bi12GeO20 (BGO) and Bi12SiO20 …