Changes on the defect structure of Bi 12 GeO 20 (BGO) and Bi 12 SiO 20 (BSO) crystals
induced by thermal treatments and laser irradiation have been studied by means of …

Abstract Single crystals of Bi 12 GeO 20 were grown large and of good optical quality. The
thermally stimulated luminescence (TSL) of Bi 12 GeO 20 was studied in the 300–700 K …

Cathodoluminescence and photoluminescence of Bi12SiO20 and Bi12GeO20 samples are
studied. Both kinds of samples show a dark orange central part or core. Emissions in the …

Photo-induced point defects have been compared in pure, heavily aluminum-doped, and
iron-containing Bi 12 GeO 20 single crystals. The experimental methods were …

Bi 12 GeO 20 single crystals irradiated at 12 K with X-rays exhibit a broad optical absorption
from approximately= 0.5 eV to the optical absorption edge of the crystal. This optical …

Because of their potential for use in electro-optic devices Bh2GeO. o and Bi,. Si02o have
attracted a great deal of attention. H Most of these studies were aimed at understanding their …

Bi 12 GeO 20 single crystal grown by Czochralski method was investigated in terms of
thermoluminescence (TL) properties. TL experiments were performed for various heating …

Abstract Bi12GeO20 (BGO) and Bi12SiO20 (BSO) single crystals doped with Al, Ga, P, Pb,
Or, Nd, Zn, Fe, and Eu are grown from the melt in good optical quality. The segregation …

Decoration of dislocations in Bi12SiO20 crystals by annealing in a reducing atmosphere -
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A red photoluminescence emission band peaking at 1.95 eV is reported for Bi12SiO20 and
Bi12GeO20. The mechanism for exciting the luminescence transition is considered, and a …