Characterization of CdTe quantum dots grown on Si (111) by hot wall epitaxy

SO Ferreira, EC Paiva, GN Fontes… - Journal of applied …, 2003 - pubs.aip.org
We report on the growth and characterization of CdTe quantum dots on Si (111) by direct
island nucleation. The samples were grown by hot wall epitaxy on Si (111) substrates …
被引用次数：37 相关文章

Characterization of CdTe quantum dots grown on Si (111) by hot wall epitaxy

SO Ferreira, EC Paiva, GN Fontes… - Journal of Applied …, 2003 - pubs.aip.org
We report on the growth and characterization of CdTe quantum dots on Si (111) by direct
island nucleation. The samples were grown by hot wall epitaxy on Si (111) substrates …
[PDF] researchgate.net

[PDF][PDF] Characterization of CdTe quantum dots grown on Si (111) by hot wall epitaxy

SO Ferreira, EC Paiva, GN Fontes… - JOURNAL OF APPLIED …, 2003 - researchgate.net
We report on the growth and characterization of CdTe quantum dots on Si (111) by direct
island nucleation. The samples were grown by hot wall epitaxy on Si (111) substrates …

Characterization of CdTe quantum dots grown on Si (111) by hot wall epitaxy

SO Ferreira, EC Paiva, GN Fontes… - Journal of Applied …, 2003 - ui.adsabs.harvard.edu
We report on the growth and characterization of CdTe quantum dots on Si (111) by direct
island nucleation. The samples were grown by hot wall epitaxy on Si (111) substrates …

[引用][C] Characterization of CdTe quantum dots grown on Si (111) by hot wall epitaxy

SO Ferreira, EC Paiva, GN Fontes… - Journal of Applied …, 2003 - cir.nii.ac.jp

[引用][C] Characterization of CdTe quantum dots grown on Si (111) by hot wall epitaxy

SO FERREIRA, EC PAIVA… - Journal of …, 2003 - American Institute of Physics