The impact of scanner model vectorization on optical proximity correction

JK Tyminski, T Nakashima, Q Zhang… - Photomask and …, 2007 - spiedigitallibrary.org
Low pass filtering taking place in the projection tools used by IC industry leads to a range of
optical proximity effects resulting in undesired IC characteristics. To correct these predicable …

Scanner-dependent optical proximity effects

JK Tyminski, T Matsuyama… - Optical …, 2009 - spiedigitallibrary.org
Optical imaging of IC critical designs is impacted by optical proximity effects, OPEs,
originating from finite numerical aperture of projection lenses used in modern projectors …

Polarization-dependent proximity effects

JK Tyminski, T Matsuyama… - Optical …, 2007 - spiedigitallibrary.org
To meet the imaging resolution requirements, driven by the evolution of IC design rules,
leading-edge scanners incorporate projection lenses with hyper-NAs. Moreover, immersion …

Impact of topographic mask models on scanner matching solutions

JK Tyminski, J Pomplun… - Optical Microlithography …, 2014 - spiedigitallibrary.org
Of keen interest to the IC industry are advanced computational lithography applications such
as Optical Proximity Correction of IC layouts (OPC), scanner matching by optical proximity …

Resist development modeling for OPC accuracy improvement

Y Fan, L Zavyalova, Y Zhang, C Zhang… - Optical …, 2009 - spiedigitallibrary.org
A precise lithographic model has always been a critical component for the technique of
Optical Proximity Correction (OPC) since it was introduced a decade ago [1]. As …

Process window based optical proximity correction of lithographic images

RA Ferguson, MA Lavin, LW Liebmann… - US Patent …, 2003 - Google Patents
2. Description of Related Art Integrated circuits are fabricated by lithographic techniques,
where energy beams transmit integrated circuit images or patterns on photomasks to …

Efficient post-OPC lithography hotspot detection using a novel OPC correction and verification flow

Q Zhang, P VanAdrichem… - Photomask and Next …, 2007 - spiedigitallibrary.org
An accurate process model has always been the key for successful implementation of model-
based Optical Proximity Correction (OPC). As CD control requirements become severe at …

Analysis of OPC optical model accuracy with detailed scanner information

L Zavyalova, K Lucas, Q Zhang, Y Fan… - Optical …, 2008 - spiedigitallibrary.org
Production optical proximity correction (OPC) tools employ compact optical models in order
to accurately predict complicated optical lithography systems with good theoretical accuracy …

Large scale model of wafer topography effects

N Voznesenskiy, HJ Stock, B Küchler… - Optical …, 2011 - spiedigitallibrary.org
A technique traditionally used for optical proximity correction (OPC) is extended to include
topography proximity effects (TPE). Central to this is a thin-mask imaging model capable of …

Understanding the impact of rigorous mask effects in the presence of empirical process models used in optical proximity correction (OPC)

MC Lam, K Adam - Optical Microlithography XX, 2007 - spiedigitallibrary.org
Some practical aspects of integrating a mask modeling solution into the Optical Proximity
Correction (OPC) framework are discussed. Specifically, investigations were performed to …