Determination of free carrier density in the low doping regime of 4H-SiC by Raman scattering

S Nakashima, T Kitamura, T Kato, K Kojima… - Applied Physics …, 2008 - pubs.aip.org
The free carrier concentration of n-4 H-Si C was deduced by Raman spectroscopy using LO
phonon plasmon coupled (LOPC) modes as a monitor band. We could determine the free …
被引用次数：34 相关文章

Determination of free carrier density in the low doping regime of 4H-SiC by Raman scattering

S Nakashima, T Kitamura, T Kato, K Kojima… - Applied Physics …, 2008 - pubs.aip.org
The free carrier concentration of n-4H-SiC was deduced by Raman spectroscopy using LO
phonon plasmon coupled LOPC modes as a monitor band. We could determine the free …

Determination of free carrier density in the low doping regime of 4H-Si C by Raman scattering

S Nakashima, T Kitamura, T Kato, K Kojima… - Applied Physics …, 2008 - elibrary.ru
The free carrier concentration of n-4H-Si C was deduced by Raman spectroscopy using LO
phonon plasmon coupled (LOPC) modes as a monitor band. We could determine the free …

Determination of free carrier density in the low doping regime of 4H-SiC by Raman scattering

S Nakashima, T Kitamura, T Kato… - Applied Physics …, 2008 - ui.adsabs.harvard.edu
The free carrier concentration of n-4H-SiC was deduced by Raman spectroscopy using LO
phonon plasmon coupled (LOPC) modes as a monitor band. We could determine the free …

[引用][C] Determination of free carrier density in the low doping regime of 4H-SiC by Raman scattering

S NAKASHIMA, T KITAMURA… - Applied …, 2008 - American Institute of Physics