We investigate inelastic light scattering by longitudinal optic phonon-plasmon coupled
modes (LOPCMs) in a series of heavily Se-doped, n-type GaAs 1− x N x epilayers with x< …

This paper investigates the mobility of electrons scattering from the coupled system of
electrons and longitudinal-optical (LO) phonons in n-type GaAs. The Boltzmann equation is …

The dominant electron scattering mechanisms in GaAsN were investigated by analysing the
Hall electron mobility and photoluminescence (PL) spectrum. The GaAsN thin films were …

Raman scattering from longitudinal optical phonon-plasmon coupled mode was observed in
a series of InGaAsN/GaAs single quantum well samples grown by metalorganic vapor phase …

We demonstrate quantitatively how values of electron densities in GaAs extracted from
Raman spectra of two samples depend on models used to describe electric susceptibility …

The infrared-optical properties of GaAs/GaNxAs1− x superlattice (SL) heterostructures (0<
x< 3.3%) are studied by variable angle-of-incidence infrared spectroscopic ellipsometry …

We present the results of a detailed investigation of the infrared reflectivity spectra of n-GaAs
as a function of doping such that the free-carrier plasma frequency is swept into and away …

Two distinct maxima EW and EW′ are observed in the resonant Raman-scattering profile
for the LO phonon asymmetric linewidth broadening in GaAs 1− x N x and are attributed to …

The infrared transmission spectrum of Si-doped molecular beam epitaxy (MBE)-grown GaAs
epilayers, 2–2.5− μ m thick, measured in the oblique (Berreman) geometry, revealed distinct …

The plasmon-longitudinal optical LO phonon collective excitations were studied by Raman
scattering in cubic GaN doped with Si and in intrinsically doped cubic AlxGa1xN alloys. The …