Rapid Surface Oxidation as a Source of Surface Degradation Factor for Bi2Se3

D Kong, JJ Cha, K Lai, H Peng, JG Analytis, S Meister… - ACS …, 2011 - ACS Publications
Bismuth selenide (Bi2Se3) is a topological insulator with metallic surface states (SS)
residing in a large bulk bandgap. In experiments, synthesized Bi2Se3 is often heavily n-type …
被引用次数：410 相关文章

[引用][C] Rapid Surface Oxidation as a Source of Surface Degradation Factor for Bi 2 Se 3

D Kong, JJ Cha, K Lai, H Peng, JG Analytis, S Meister… - ACS Nano, 2011 - infona.pl
Rapid Surface Oxidation as a Source of Surface Degradation Factor for Bi 2 Se 3 × Close
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Rapid Surface Oxidation as a Source of Surface Degradation Factor for Bi 2 Se 3

D Kong, JJ Cha, K Lai, H Peng, JG Analytis, S Meister… - 2011 - repository.kaust.edu.sa
Abstract Bismuth selenide (Bi2Se3) is a topological insulator with metallic surface states
(SS) residing in a large bulk bandgap. In experiments, synthesized Bi2Se3 is often heavily n …

Rapid surface oxidation as a source of surface degradation factor for Bi₂Se₃.

D Kong, J Cha, K Lai, H Peng, J Analytis, S Meister… - ACS nano, 2011 - ora.ox.ac.uk
Bismuth selenide (Bi (2) Se (3)) is a topological insulator with metallic surface states (SS)
residing in a large bulk bandgap. In experiments, synthesized Bi (2) Se (3) is often heavily n …

Rapid Surface Oxidation as a Source of Surface Degradation Factor for Bi2Se3

D Kong, JJ Cha, K Lai, H Peng, JG Analytis… - arXiv e …, 2011 - ui.adsabs.harvard.edu
Bi2Se3 is a topological insulator with metallic surface states residing in a large bulk
bandgap. It is believed that Bi2Se3 gets additional n-type doping after exposure to …

Rapid surface oxidation as a source of surface degradation factor for Bi₂Se₃

D Kong, JJ Cha, K Lai, H Peng, JG Analytis… - ACS …, 2011 - pubmed.ncbi.nlm.nih.gov
Bismuth selenide (Bi (2) Se (3)) is a topological insulator with metallic surface states (SS)
residing in a large bulk bandgap. In experiments, synthesized Bi (2) Se (3) is often heavily n …

[引用][C] Rapid Surface Oxidation as a Source of Surface Degradation Factor for Bi2Se3

D Kong, JJ Cha, K Lai, H Peng, JG Analytis, S Meister… - ACS Nano, 2011 - cir.nii.ac.jp
Rapid Surface Oxidation as a Source of Surface Degradation Factor for Bi<sub>2</sub>Se<sub>3</sub>
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[PDF][PDF] Rapid Surface Oxidation as a Source of Surface Degradation Factor for Bi2Se3

D Kong, JJ Cha, K Lai, H Peng, JG Analytis, S Meister… - 2011 - stanford.edu
ABSTRACT Bismuth selenide (Bi2Se3) is a topological insulator with metallic surface states
(SS) residing in a large bulk bandgap. In experiments, synthesized Bi2Se3 is often heavily n …

Rapid Surface Oxidation as a Source of Surface Degradation Factor for Bi2Se3

D Kong, JJ Cha, K Lai, H Peng, JG Analytis… - arXiv preprint arXiv …, 2011 - arxiv.org
Bi2Se3 is a topological insulator with metallic surface states residing in a large bulk
bandgap. It is believed that Bi2Se3 gets additional n-type doping after exposure to …

Rapid surface oxidation as a source of surface degradation factor for Bi₂Se₃.

D Kong, JJ Cha, K Lai, H Peng, JG Analytis, S Meister… - ACS Nano, 2011 - europepmc.org
Rapid surface oxidation as a source of surface degradation factor for Bi₂Se₃. - Abstract -
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