[图书][B] Optical study of coupling mechanisms in quantum dot-quantum well hybrid nanostructure

V Dorogan - 2011 - search.proquest.com
The interaction between nanostructures of different dimensionality, two-dimensional
quantum well (QW) and zero-dimensional quantum dots (QDs), has been studied by …

Tunneling-barrier controlled excitation transfer in hybrid quantum dot-quantum well nanostructures

YI Mazur, VG Dorogan, E Marega… - Journal of Applied …, 2010 - pubs.aip.org
A systematic spectroscopic study of the carrier transfer between quantum dot (QD) and
quantum well (QW) layers is carried out in a hybrid dot-well system based on InAs QDs and …

Excited state coherent resonant electronic tunneling in quantum well-quantum dot hybrid structures

YI Mazur, VG Dorogan, E Marega, M Benamara… - Applied Physics …, 2011 - pubs.aip.org
A strong effect of a quantum well (QW) incorporated into a quantum dot (QD) structure on the
density of states of the system and the efficiency of carrier transfer from the barrier material to …

Carrier dynamics in hybrid nanostructure with electronic coupling from an InGaAs quantum well to InAs quantum dots

Y Wang, X Sheng, Q Yuan, Q Guo, S Wang, G Fu… - Journal of …, 2018 - Elsevier
Carrier dynamics including carrier relaxation and tunneling within a coupled InAs quantum
dot (QD)–In 0.15 Ga 0.85 As quantum well (QW) hybrid nanostructure are investigated using …

State filling dependent luminescence in hybrid tunnel coupled dot–well structures

YI Mazur, VG Dorogan, ME Ware, E Marega Jr… - Nanoscale, 2012 - pubs.rsc.org
A strong dependence of quantum dot (QD)–quantum well (QW) tunnel coupling on the
energy band alignment is established in hybrid InAs/GaAs–InxGa1− xAs/GaAs dot–well …

Excitation transfer in self-organized asymmetric quantum dot pairs

R Heitz, I Mukhametzhanov, P Chen, A Madhukar - Physical Review B, 1998 - APS
Excitation transfer processes within self-organized quantum dot (QD) pairs in bilayer
InAs/GaAs QD samples are investigated. QDs in samples with a 1.74-ML InAs seed layer …

Lateral carrier diffusion in InGaAs/GaAs coupled quantum dot-quantum well system

M Pieczarka, M Syperek, D Biegańska, C Gilfert… - Applied Physics …, 2017 - pubs.aip.org
The lateral carrier diffusion process is investigated in coupled InGaAs/GaAs quantum dot-
quantum well (QD-QW) structures by means of spatially resolved photoluminescence …

Photoluminescence study of carrier transfer among vertically aligned double-stacked InAs/GaAs quantum dot layers

YI Mazur, X Wang, ZM Wang, GJ Salamo… - Applied physics …, 2002 - pubs.aip.org
Photoluminescence (PL) properties of self-organized quantum dots (QDs) in a vertically
aligned double-layer InAs/GaAs QD structure are studied as a function of temperature from …

Effect of nanobridges on the emission spectra of a quantum dot-quantum well tunneling pair

VG Talalaev, GE Cirlin, LI Goray, BV Novikov… - Semiconductors, 2014 - Springer
Emission in the narrow spectral range 950–1000 nm is obtained at the nanobridge optical
transition involving experimentally and theoretically observed hybrid states in the InGaAs …

Carrier diffusion as a measure of carrier/exciton transfer rate in InAs/InGaAsP/InP hybrid quantum dot–quantum well structures emitting at telecom spectral range

W Rudno-Rudziński, D Biegańska, J Misiewicz… - Applied Physics …, 2018 - pubs.aip.org
We investigate the diffusion of photo-generated carriers (excitons) in hybrid two dimensional–
zero dimensional tunnel injection structures, based on strongly elongated InAs quantum …