Abstract Praseodymium Calcium Manganite (Pr0. 7Ca0. 3MnO3) shows a p-type
semiconducting behaviour and is a paramagnetic insulator at room temperature. In the …

Memristors are effectively variable resistors with memory whose resistance can be modified
electrically. The state of internal resistance is a function of the history of the applied voltage …

This dissertation investigates the phenomenon of resistive switching (RS) in lowbandwidth
mixed-valence perovskite manganite oxides. In particular, the compounds Pr0. 6Ca0 …

Miniaturization of conventional nonvolatile (NVM) memory devices is rapidly approaching
the physical limitations of the constituent materials. An emerging random access memory …

The continuous demand of lightweight portable, cheap and low-power devices has pushed
the electronic industry to the limits of the current technology. Flash memory technology …

In this work, TiO 2 based metal/metal oxide/metal memristor structures are investigated
using I–V–t measurements. TiO 2 films are deposited to pre-patterned area using a lift-off …

This paper discusses into the intricate realm of resistive switching, exploring the optical
characteristics of metal oxide thin film memristors with a specific focus on Copper Oxide …

Memristors are considered to be next‐generation non‐volatile memory devices owing to
their fast switching and low power consumption. Metal oxide memristors have been …

The memristor behavior of thin films having a multilayer Pt/ZnO/Fe/ZnO/ITO structure,
deposited using RF/DC magnetron sputtering, was studied. The iron layer between the ZnO …

The current memory technologies such as DRAM, SRAM, and NAND flash are facing
development limits due to the shrinking size of memory devices from micro order to nano …