Metallic oxides encased within Metal-Insulator-Metal (MIM) structures can demonstrate both
unipolar and bipolar switching mechanisms, rendering them the capability to exhibit a …

With the explosive growth of digital data in the era of the Internet of Things (IoT), fast and
scalable memory technologies are being researched for data storage and data-driven …

Resistive switching memory (RRAM) devices are receiving considerable interest as future-
generation high-density storage technology or possible enablers of storage class memory …

In the present era of data-driven architectures like 5G, Internet of things (IoT), Artificial
Intelligence (AI), etc, the requirement of fast-switchable memory storage is more than ever …

This chapter gives a general overview of the state-of-the-art of resistive switching random
access memories (RRAM or ReRAM), which are metal/insulator/metal devices exhibiting …

Resistive switching (RS) memory effect in metal-oxide-metal junctions is a fascinating
phenomenon toward next-generation universal nonvolatile memories. However the lack of …

To allow for novel memory and computing schemes based on the resistive switching
memory (RRAM), physically based compact models are needed. This paper presents a new …

The resistive switching dynamics in metal–insulator–metal (MIM) structures may be
explained through the formation and rupture of metallic filaments in the dielectric layer …

Rapid increase in information and big-data processing demand novel paradigms of adaptive
circuitry to not only overcome the fundamental limitations of CMOS scaling but to transform …

We investigate the resistive switching power from unipolar resistive switching current-
voltage characteristics in various binary metal oxide films sandwiched by different metal …