[PDF][PDF] 4-junction solar cells with dilute nitrides: optimization with luminescent coupling
A 4-junction Ga0. 5In0. 5P/Al0. 05Ga0. 95As/InGaAsN (Sb)/Ge solar cell with a 0.90 eV
dilute nitride sub-cell has been modeled using a drift-diffusion based device simulator, and …
dilute nitride sub-cell has been modeled using a drift-diffusion based device simulator, and …
Design constraints of np InGaAsN dilute nitride sub-cells for 3-and 4-junction solar cell applications under concentrated illumination
M Wilkins, A Walker, JF Wheeldon… - 2013 IEEE 39th …, 2013 - ieeexplore.ieee.org
Solar cells with an np structure consisting of an InGaAsN dilute nitride emitter with n-type
background doping and a p-type doped InGaAsN base are numerically simulated on GaAs …
background doping and a p-type doped InGaAsN base are numerically simulated on GaAs …
Dilute nitride multijunction solar cells grown by molecular beam epitaxy
A Aho - 2015 - trepo.tuni.fi
Solar cells generate green energy directly from sunlight. The energy conversion efficiency of
solar cells depends strongly on materials used as absorbers and the cell architecture …
solar cells depends strongly on materials used as absorbers and the cell architecture …
Modelling of multijunction solar cells with dilute nitride n–i–p–i junctions
B Royall, N Balkan - physica status solidi (b), 2011 - Wiley Online Library
We are proposing a novel structure containing GaInNAs n–i–p–i layers with a band gap of 1
eV connected in series to a GaInP/GaAs tandem structure. The device performance is …
eV connected in series to a GaInP/GaAs tandem structure. The device performance is …
Effects of luminescent coupling in single-and 4-junction dilute nitride solar cells
MM Wilkins, AM Gabr, AH Trojnar… - 2014 IEEE 40th …, 2014 - ieeexplore.ieee.org
A novel method for incorporating the effects of luminescent coupling and photon recycling in
numerical simulations of planar devices is described. The carrier generation is incorporated …
numerical simulations of planar devices is described. The carrier generation is incorporated …
Dilute nitride multi-quantum well multi-junction design: a route to ultra-efficient photovoltaic devices
The current high-efficiency triple junction (Al) InGaP (1.9 eV)/GaAs (1.42 eV)/Ge (0.66 eV)
design for a solar cell can be improved upon by the use dilute nitrides to include a sub-cell …
design for a solar cell can be improved upon by the use dilute nitrides to include a sub-cell …
Modeling of 1 eV dilute nitride multi-quantum well solar cell
The efficiency of existing In (Al) GaP/GaAs/Ge multi-junction solar cell can be further
increased by the introduction of a 4 th junction with a band-gap in the range of 1 eV in …
increased by the introduction of a 4 th junction with a band-gap in the range of 1 eV in …
Dilute nitride space solar cells: towards 4 junctions
A Aho, A Tukiainen, V Polojarvi… - ESA Special …, 2014 - ui.adsabs.harvard.edu
The use of 1 eV band gap GaInNAs heterostructures is an important step towards the
development of monolithic solar cells with more than three junctions. We report current …
development of monolithic solar cells with more than three junctions. We report current …
Dilute nitrides for 4-and 6-junction space solar cells
S Essig, E Stammler, S Ronsch… - 9th European …, 2011 - ui.adsabs.harvard.edu
According to simulations the efficiency of conventional, lattice-matched GaInP/GaInAs/Ge
triple-junction space solar cells can be strongly increased by the incorporation of additional …
triple-junction space solar cells can be strongly increased by the incorporation of additional …
Dilute nitride GaInNAs and GaInNAsSb for solar cell applications
SL Tan, WM Soong, MJ Steer, S Zhang… - Physics, Simulation …, 2012 - spiedigitallibrary.org
The dilute nitride GaInNAs (Sb) alloy system is challenging to grow and defects can cause
short diffusion lengths and high background doping densities. Despite these difficulties …
short diffusion lengths and high background doping densities. Despite these difficulties …