Modeling valance change memristor device: Oxide thickness, material type, and temperature effects

H Abunahla, B Mohammad, D Homouz… - IEEE Transactions on …, 2016 - ieeexplore.ieee.org
This paper presents a physics-based mathematical model for anionic memristor devices.
The model utilizes Poisson-Boltzmann equation to account for temperature effect on device …
被引用次数：35 相关文章
[PDF] researchgate.net

[PDF][PDF] Modeling Valance Change Memristor Device: Oxide Thickness, Material Type, and Temperature Effects

H Abunahla, B Mohammad, D Homouz, CJ Okelly - researchgate.net
This paper presents a physics-based mathematical model for anionic memristor devices.
The model utilizes Poisson-Boltzmann equation to account for temperature effect on device …

Modeling Valance Change Memristor Device: Oxide Thickness, Material Type, and Temperature Effects

H Abunahla, B Mohammad… - … on Circuits and …, 2016 - khalifauniversity.elsevierpure.com
This paper presents a physics-based mathematical model for anionic memristor devices.
The model utilizes Poisson-Boltzmann equation to account for temperature effect on device …

[引用][C] Modeling Valance Change Memristor Device: Oxide Thickness, Material Type, and Temperature Effects

H Abunahla, B Mohammad, D Homouz… - IEEE Transactions on …, 2016 - cir.nii.ac.jp
Modeling Valance Change Memristor Device: Oxide Thickness, Material Type, and
Temperature Effects | CiNii Research CiNii 国立情報学研究所 学術情報ナビゲータ[サイニィ] 詳細へ …
[PDF] academia.edu

[PDF][PDF] Modeling Valance Change Memristor Device: Oxide Thickness, Material Type, and Temperature Effects

H Abunahla, B Mohammad, D Homouz, CJ Okelly - academia.edu
This paper presents a physics-based mathematical model for anionic memristor devices.
The model utilizes Poisson-Boltzmann equation to account for temperature effect on device …