Absence of quantum confinement effects in the photoluminescence of Si3N4–embedded Si nanocrystals
Superlattices of Si-rich silicon nitride and Si 3 N 4 are prepared by plasma-enhanced
chemical vapor deposition and, subsequently, annealed at 1150 C to form size-controlled Si …
chemical vapor deposition and, subsequently, annealed at 1150 C to form size-controlled Si …
[PDF][PDF] Absence of quantum confinement effects in the photoluminescence of Si 3 N 4–embedded Si nanocrystals
D Hiller, A Zelenina, S Gutsch, SA Dyakov… - Journal of Applied …, 2014 - academia.edu
Superlattices of Si-rich silicon nitride and Si3N4 are prepared by plasma-enhanced
chemical vapor deposition and, subsequently, annealed at 1150 C to form size-controlled Si …
chemical vapor deposition and, subsequently, annealed at 1150 C to form size-controlled Si …
Absence of quantum confinement effects in the photoluminescence of Si3N4–embedded Si nanocrystals
D Hiller, A Zelenina, S Gutsch, SA Dyakov… - Journal of Applied …, 2014 - pubs.aip.org
Superlattices of Si-rich silicon nitride and Si3N4 are prepared by plasma-enhanced
chemical vapor deposition and, subsequently, annealed at 1150 C to form size-controlled Si …
chemical vapor deposition and, subsequently, annealed at 1150 C to form size-controlled Si …
Absence of quantum confinement effects in the photoluminescence of Si3N4-embedded Si nanocrystals
D Hiller, A Zelenina, S Gutsch, SA Dyakov… - 2014 - publica.fraunhofer.de
Superlattices of Si-rich silicon nitride and Si3N4 are prepared by plasma-enhanced
chemical vapor deposition and, subsequently, annealed at 1150&# 8201; C to form size …
chemical vapor deposition and, subsequently, annealed at 1150&# 8201; C to form size …
Absence of quantum confinement effects in the photoluminescence of Si3N4-embedded Si nanocrystals
D Hiller, A Zelenina, S Gutsch… - Journal of Applied …, 2014 - ui.adsabs.harvard.edu
Superlattices of Si-rich silicon nitride and Si 3 N 4 are prepared by plasma-enhanced
chemical vapor deposition and, subsequently, annealed at 1150 C to form size-controlled Si …
chemical vapor deposition and, subsequently, annealed at 1150 C to form size-controlled Si …
[PDF][PDF] Absence of quantum confinement effects in the photoluminescence of Si 3 N 4–embedded Si nanocrystals
D Hiller, A Zelenina, S Gutsch, SA Dyakov… - Journal of Applied …, 2014 - researchgate.net
Superlattices of Si-rich silicon nitride and Si3N4 are prepared by plasma-enhanced
chemical vapor deposition and, subsequently, annealed at 1150 C to form size-controlled Si …
chemical vapor deposition and, subsequently, annealed at 1150 C to form size-controlled Si …
Absence of quantum confinement effects in the photoluminescence of Si3N4-embedded Si nanocrystals
D Hiller, A Zelenina, S Gutsch, S Dyakov… - Journal of Applied …, 2014 - diva-portal.org
Superlattices of Si-rich silicon nitride and Si3N4 are prepared by plasma-enhanced
chemical vapor deposition and, subsequently, annealed at 1150 degrees C to form size …
chemical vapor deposition and, subsequently, annealed at 1150 degrees C to form size …
[PDF][PDF] Absence of quantum confinement effects in the photoluminescence of Si 3 N 4–embedded Si nanocrystals
D Hiller, A Zelenina, S Gutsch… - JOURNAL OF …, 2014 - physics.mff.cuni.cz
Superlattices of Si-rich silicon nitride and Si3N4 are prepared by plasma-enhanced
chemical vapor deposition and, subsequently, annealed at 1150 C to form size-controlled Si …
chemical vapor deposition and, subsequently, annealed at 1150 C to form size-controlled Si …
[引用][C] Absence of quantum confinement effects in the photoluminescence of Si 3N4-embedded Si nanocrystals
D Hiller, A Zelenina, S Gutsch, M Zacharias… - Journal of Applied …, 2014 - elibrary.ru
Absence of quantum confinement effects in the photoluminescence of Si3N4–embedded Si nanocrystals
D Hiller, A Zelenina, S Gutsch, M Zacharias… - Journal of Applied …, 2014 - inis.iaea.org
[en] Superlattices of Si-rich silicon nitride and Si 3 N 4 are prepared by plasma-enhanced
chemical vapor deposition and, subsequently, annealed at 1150 C to form size-controlled Si …
chemical vapor deposition and, subsequently, annealed at 1150 C to form size-controlled Si …