Polarization aberrations induced by graded multilayer coatings in EUV lithography scanners

TS Jota, RA Chipman - Extreme Ultraviolet (EUV) Lithography …, 2016 - spiedigitallibrary.org
The functional form of coating-induced polarization aberrations in EUV lithography systems
is evaluated through polarization ray tracing of an example 3× EUV scanner with state-of-the …

Effects and improvements of coating induced polarization aberration on lithography lens design

H Shang, C Liu, W Zhang - 2015 - ir.ciomp.ac.cn
摘要 In order to achieve high imaging requirement of projection lithography lens, the impact
of polarization effects induced by coatings need to be considered and analyzed during the …

Reduction of coating induced polarization aberrations by controlling the polarization state variation

Y Li, W Shen, Z Zheng, Y Zhang, X Liu, X Hao - Journal of Optics, 2011 - iopscience.iop.org
The mechanism of coating induced polarization state variation is analysed by the Jones
matrix. Pauli spin matrices are used to establish the relationship between coating induced …

Polarization dependence of multilayer reflectance in the EUV spectral range

F Scholze, C Laubis, C Buchholz… - Emerging …, 2007 - spiedigitallibrary.org
The Physikalisch-Technische Bundesanstalt (PTB) with its laboratory at the electron storage
ring BESSY II supports the national and European industry by carrying out high-accuracy at …

Design and collaborative optimization method of multilayer coatings to correct polarization aberration of optical systems

W Jia, W He, Y Li, Y Fu, L Zhang - Optics Express, 2022 - opg.optica.org
Multilayer coatings induce a significant polarization aberration in optical systems with high
numerical aperture (NA) and wide field of view, which will cause wavefront distortion and …

Characterization of EUV image fading induced by overlay corrections using pattern shift response metrology

D Schmidt, R Cornell, M Kling, A Gabor… - International …, 2019 - spiedigitallibrary.org
The effects of EUV scanner actuated overlay corrections on image fidelity are discussed.
Intrafield overlay corrections are implemented by reticle and/or wafer stage modulations …

[引用][C] Areal images of EUV projection lithography masks with defects in reflective coatings: Electromagnetic simulation

KB Nguyen, AK Wong, AR Neureuther… - Soft X-ray Projection …, 1993 - opg.optica.org
We used electromagnetic simulation to study the effect of multilayer coating defects on the
areal image of reflective masks for EUV projection lithography. Calculated results show that …

Polarization dependence of multilayer reflectance in the EUV spectral range

F Scholze, C Laubis, C Buchholz… - Emerging …, 2006 - spiedigitallibrary.org
The development of EUV lithography depends strongly on the availability of suitable
metrology equipment. The Physikalisch-Technische Bundesanstalt (PTB) with its laboratory …

3D mask effects of absorber geometry in EUV lithography systems

RR Haque, Z Levinson… - Extreme Ultraviolet (EUV) …, 2016 - spiedigitallibrary.org
The non-zero chief ray angle at the object (CRAO) in EUVL systems introduces azimuthally
asymmetric phase shifts. Understanding and characterizing these effects is critical to EUVL …

Skew aberration analysis

G Young, RA Chipman - Optical Systems Design 2012, 2012 - spiedigitallibrary.org
Skew aberration is an intrinsic rotation of polarization states due to the geometric
transformation of local coordinates via parallel transport of vectors. Skew aberration is a …