Power amplification at 0.65 THz using INP HEMTs

V Radisic, KMKH Leong, X Mei… - IEEE Transactions …, 2011 - ieeexplore.ieee.org
In this paper, progress toward developing solid-state power-amplifier modules at 0.65 THz is
reported. This work is enabled by a>; 1 THz f MAX InP HEMT transistor with a 30-nm gate …
被引用次数：154 相关文章

[引用][C] Power Amplification at 0.65 THz Using InP HEMTs

V Radisic, KMKH Leong, X Mei… - IEEE Transactions …, 2012 - ui.adsabs.harvard.edu
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[引用][C] Power Amplification at 0.65 THz Using InP HEMTs

V Radisic, KMKH Leong, X Mei, S Sarkozy… - IEEE Transactions on …, 2012 - cir.nii.ac.jp

[引用][C] Power Amplification at 0.65 THz Using InP HEMTs

V RADISIC, KMK LEONG, X MEI… - IEEE transactions …, 2012 - pascal-francis.inist.fr
Power Amplification at 0.65 THz Using InP HEMTs CNRS Inist Pascal-Francis CNRS Pascal
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[引用][C] Power Amplification at 0.65 THz Using InP HEMTs

V RADISIC, KMKH LEONG… - IEEE …, 2012 - Institute of Electrical and Electronics …