Effect of conditions of electrochemical etching on the morphological, structural, and optical properties of porous gallium arsenide

IN Arsentyev, AV Zhabotinsky - Semiconductors, 2018 - Springer
The properties of porous GaAs samples produced by the electrochemical etching of single-
crystal n-GaAs (100) wafers are studied by X-ray diffraction analysis, electron microscopy …
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[引用][C] Effect of Conditions of Electrochemical Etching on the Morphological, Structural, and Optical Properties of Porous Gallium Arsenide

PV Seredin, AS Lenshin, AV Fedyukin… - …, 2018 - ui.adsabs.harvard.edu
Effect of Conditions of Electrochemical Etching on the Morphological, Structural, and Optical
Properties of Porous Gallium Arsenide - NASA/ADS Now on home page ads icon ads Enable …

Effect of Conditions of Electrochemical Etching on the Morphological, Structural, and Optical Properties of Porous Gallium Arsenide

AS Lenshin, AV Fedyukin, DL Goloshchapov, AN Lukin… - Semiconductors, 2018 - osti.gov
The properties of porous GaAs samples produced by the electrochemical etching of single-
crystal n-GaAs (100) wafers are studied by X-ray diffraction analysis, electron microscopy …

Effect of Conditions of Electrochemical Etching on the Morphological, Structural, and Optical Properties of Porous Gallium Arsenide

PV Seredin, AS Lenshin, AV Fedyukin… - Semiconductors, 2018 - elibrary.ru
The properties of porous GaAs samples produced by the electrochemical etching of single-
crystal n-GaAs (100) wafers are studied by X-ray diffraction analysis, electron microscopy …

Effect of conditions of electrochemical etching on the morphological, structural, and optical properties of porous gallium arsenide

PV Seredin, AS Len'shin, AV Fedyukin… - Fizika i Tekhnika …, 2018 - mathnet.ru
The properties of porous GaAs samples produced by the electrochemical etching of single-
crystal $ n $-GaAs (100) wafers are studied by X-ray diffraction analysis, electron …

Effect of Conditions of Electrochemical Etching on the Morphological, Structural, and Optical Properties of Porous Gallium Arsenide

PV Seredin, AS Lenshin, AV Fedyukin… - …, 2018 - inis.iaea.org
[en] The properties of porous GaAs samples produced by the electrochemical etching of
single-crystal n-GaAs (100) wafers are studied by X-ray diffraction analysis, electron …
[PDF] academia.edu

[PDF][PDF] Effect of Conditions of Electrochemical Etching on the Morphological, Structural, and Optical Properties of Porous Gallium Arsenide

PV Seredina, AS Lenshina, AV Fedyukina… - …, 2018 - academia.edu
The properties of porous GaAs samples produced by the electrochemical etching of single-
crystal n-GaAs (100) wafers are studied by X-ray diffraction analysis, electron microscopy …

Effect of Conditions of Electrochemical Etching on the Morphological, Structural, and Optical Properties of Porous Gallium Arsenide

PV Seredin, AS Lenshin, AV Fedyukin… - …, 2018 - journals.rcsi.science
The properties of porous GaAs samples produced by the electrochemical etching of single-
crystal n-GaAs (100) wafers are studied by X-ray diffraction analysis, electron microscopy …

Effect of Conditions of Electrochemical Etching on the Morphological, Structural, and Optical Properties of Porous Gallium Arsenide.

PV Seredin, AS Lenshin, AV Fedyukin… - …, 2018 - search.ebscohost.com
Abstract: The properties of porous GaAs samples produced by the electrochemical etching
of single-crystal n-GaAs (100) wafers are studied by X-ray diffraction analysis, electron …

Effect of conditions of electrochemical etching on the morphological, structural, and optical properties of porous gallium arsenide

PV Seredin, AS Len'shin, AV Fedyukin… - Fizika i Tekhnika …, 2018 - mathnet.ru
The properties of porous GaAs samples produced by the electrochemical etching of single-
crystal $ n $-GaAs (100) wafers are studied by X-ray diffraction analysis, electron …