Low cost Ge/Si virtual substrate through dislocation trapping by nanovoids

YA Bioud, A Boucherif, E Paradis, A Soltani… - arXiv preprint arXiv …, 2018 - arxiv.org
A low-cost method to reduce the threading disloca-tions density (TDD) in relaxed
germanium (Ge) epilayers grown on silicon (Si) substrates is presented. Ge/Si sub-strate …
被引用次数：12 相关文章

Low cost Ge/Si virtual substrate through dislocation trapping by nanovoids

YA Bioud, AA Boucherif, EA Paradis… - Inter. Conf. Si Epi …, 2017 - hal.science
A low-cost method to reduce the threading disloca-tions density (TDD) in relaxed
germanium (Ge) epilayers grown on silicon (Si) substrates is presented. Ge/Si sub-strate …

Low cost Ge/Si virtual substrate through dislocation trapping by nanovoids

YA Bioud, A Boucherif, E Paradis, A Soltani… - arXiv e …, 2018 - ui.adsabs.harvard.edu
A low-cost method to reduce the threading disloca-tions density (TDD) in relaxed
germanium (Ge) epilayers grown on silicon (Si) substrates is presented. Ge/Si sub-strate …
[PDF] researchgate.net

[PDF][PDF] Low cost Ge/Si virtual substrate through dislocation trapping by nanovoids

YA Bioud, A Boucherif, E Paradis, A Soltani, D Drouin… - researchgate.net
A low-cost method to reduce the threading dislocations density (TDD) in relaxed germanium
(Ge) epilayers grown on silicon (Si) substrates is presented. Ge/Si substrate was treated with …
[PDF] core.ac.uk

[PDF][PDF] Low cost Ge/Si virtual substrate through dislocation trapping by nanovoids

YA Bioud, A Boucherif, E Paradis, D Drouin, R Arès - core.ac.uk
A low-cost method to reduce the threading dislocations density (TDD) in relaxed germanium
(Ge) epilayers grown on silicon (Si) substrates is presented. Ge/Si substrate was treated with …
[PDF] hal.science

[PDF][PDF] Low cost Ge/Si virtual substrate through dislocation trapping by nanovoids

YA Bioud, AA Boucherif, EA Paradis, DA Drouin… - hal.science
A low-cost method to reduce the threading dislocations density (TDD) in relaxed germanium
(Ge) epilayers grown on silicon (Si) substrates is presented. Ge/Si substrate was treated with …