Selective area formation of arsenic oxide-rich octahedral microcrystals during photochemical etching of n-type GaAs
A Udupa, X Yu, L Edwards, LL Goddard - Optical Materials Express, 2018 - opg.optica.org
We demonstrate how to spatially localize the formation of octahedral arsenic oxide
microcrystals in selective areas of highly doped n-type GaAs substrates during rapid digital …
microcrystals in selective areas of highly doped n-type GaAs substrates during rapid digital …
Selective area formation of arsenic oxide-rich octahedral microcrystals during photochemical etching of n-type GaAs
A Udupa, X Yu, L Edwards… - Optical Materials …, 2018 - experts.illinois.edu
We demonstrate how to spatially localize the formation of octahedral arsenic oxide
microcrystals in selective areas of highly doped n-type GaAs substrates during rapid digital …
microcrystals in selective areas of highly doped n-type GaAs substrates during rapid digital …
[引用][C] Selective area formation of arsenic oxide-rich octahedral microcrystals during photochemical etching of n-type GaAs
A Udupa, X Yu, L Edwards, LL Goddard - Optical Materials Express, 2018 - par.nsf.gov
[引用][C] Selective area formation of arsenic oxide-rich octahedral microcrystals during photochemical etching of n-type GaAs
A Udupa, X Yu, L Edwards… - Optical Materials …, 2018 - ui.adsabs.harvard.edu
Selective area formation of arsenic oxide-rich octahedral microcrystals during
photochemical etching of n-type GaAs - NASA/ADS Now on home page ads icon ads …
photochemical etching of n-type GaAs - NASA/ADS Now on home page ads icon ads …