We investigated the oxidation behaviour of an amorphous GaAs thin film deposited onto a
micro/nanotextured Si surface by an electron beam. After the deposited film was exposed to …

In this study, annealing of deep level (EL2) defect in gallium arsenide (GaAs) nanostructures
by argon ion beam irradiation has been reported. GaAs nanodots of diameter ranging from …

The GaAs granular films have been prepared by electrochemical anodic etching of n-GaAs
in HCl electrolyte at different etching temperatures. The microstructure and optical properties …

GaAs nanocrystal-generated thin films were synthesized by a low-temperature electro-
deposition technique. The structure and the optical properties of the above nanocrystalline …

The presence of crystalline and amorphous elemental arsenic in films grown by the thermal
oxidation of GaAs under arsenic trioxide vapor was observed using Raman backscattering …

Gallium arsenide (GaAs) microstructures have been prepared by electrochemical anodic
etching of GaAs substrate in an aqueous solution of H 3 PO 4 (85 wt%): H 2 O 2 (30 wt%): H …

Gallium arsenide (GaAs) thin films have been deposited on ITO-coated glass substrates
from acid aqueous solution by electrodeposition technique. The structure and the …

The growth of small crystals of dimensions up to approximately ten microns was observed
on the surface of GaAs (100) wafers upon air exposure. The composition and the formation …

Nano and microstructure semiconductor heterostructures are employed for a wide variety of
sensor and photonics applications. The present paper discusses the synthesis of arsenic …

Thin-film GaAs on glass was formed by ablating n-type GaAs with nano-second pulses at
532nm. The deposition was done in the most straightforward way without heating the …