We report on the study of the third-order nonlinear optical interactions in In x Ga 1-x As y P 1-
y/InP strip-loaded waveguides. The material composition and waveguide structures were …

This doctoral dissertation focuses on fabrication processes for integrated photonic devices
based on III-V semiconductors. This work covers a range of III-V materials and a variety of …

We report the first measurement of two-photon absorption (TPA) and self-phase modulation
in an InGaAsP/InP multi-quantum-well waveguide. The TPA coefficient, &, was found to be …

InGaAsP three‐dimensional optical waveguides with p+‐n junctions are described. A p+‐
InGaAsP/n‐InGaAsP/n+‐InGaAsP double‐heterostructure rib‐type waveguide, which is …

We propose several designs of nonlinear optical waveguides based on quaternary III-V
semiconductors AlGaAsSb and InGaAsP. These semiconductor materials have been widely …

All-optical refractive nonlinearity in a passive InGaAs/InAlAs multiquantum well waveguide is
evaluated for TE and TM modes at 1.55 μm wavelength and room temperature. A quarter …

Results on wavelength shifters based on four-wave mixing that operate in the 1.5-μm regime
are reported. These devices utilize the near-bandedge resonant enhancement in the third …

We report the first surface emission of red light from an InGaAs waveguide, generated by the
nonlinear mixing of two counterpropagating guided waves at wavelengths around 1.3 μm. A …

Measurements have been made at wavelengths between 1486 and 1600 nm of nonlinear
refraction and absorption in an InGaAs single quantum well centered in an InGaAsP …

We report the dynamics of the optical nonlinearity, measured by a weak probe propagating
in single-mode In x Ga 1− x As/InP quantum-well waveguides, at wavelengths …