The properties of porous GaAs samples produced by the electrochemical etching of single-
crystal n-GaAs (100) wafers are studied by X-ray diffraction analysis, electron microscopy …

The paper presents the results of structural and photoluminescent (PL) studies of porous
GaAs layers created by electrochemical etching of GaAs wafers. Structural and …

The surface morphology and structure parameters of the surface layers of the single-crystal
GaAs (001) wafers subjected to He+ ion implantation (E= 300 keV, D= 10 16 atoms/cm 2) …

The synthesis and characterization of heterostructure por-Ga< sub> 2 O< sub> 3/GaAs
represent a crucial advancement in nanomaterials, particularly in optoelectronic …

The optical properties of porous GaAs layers obtained by electrochemical etching of single-
crystal n-and p-GaAs (100) wafers are studied. It is shown that the shape of the nanocrystals …

Porous GaAs layers obtained by electrochemical etching were investigated using SEM, AFM
and optical methods. It was established that increasing etching duration and current density …

The optical and structural properties of a porous GaAs have been studied. The samples a of
porous GaAs were fabricated by an electrochemical method on n‐and p‐type GaAs (100) …

The results of the study of the structure of gallium arsenide wafers and porous layers GaAs
by high-resolution X-ray diffraction (XRD) are discussed. The wafers GaAs were previously …

Porous GaAs layers were formed by electrochemical etching of p-type GaAs (100)
substrates in HF solution. A surface characterization has been performed on p-type GaAs …

We investigated structural perfection of porous gallium arsenide layers formed in GaAs
(001). Different modes of electrochemical etching of n-type GaAs (001) substrates in fluoride …