This doctoral dissertation focuses on fabrication processes for integrated photonic devices
based on III-V semiconductors. This work covers a range of III-V materials and a variety of …

Gallium nitride (GaN), a wide-bandgap III–V semiconductor material with a bandgap
wavelength λ_g= 366 nm (for Wurtzite GaN) and transparency window covering the visible …

The combination of nonlinear and integrated photonics enables applications in
telecommunication, metrology, spectroscopy, and quantum information science. Pioneer …

We propose several designs of nonlinear optical waveguides based on quaternary III-V
semiconductors AlGaAsSb and InGaAsP. These semiconductor materials have been widely …

Group III–V semiconductors are based on the elements of groups III and V of the periodic
table. The possibility to grow thin-films made of binary, ternary, and quaternary III–V alloys …

Freestanding GaN waveguides were fabricated on a silicon substrate by a combination of Cl
2 plasma reactive ion etching and XeF 2 gas selective etching. The freestanding GaN …

The emission wavelength of LEDs depends on the bandgap energy of the semiconductor
used for fabricating the devices. The bandgap energy is an inherent property of the …

We report on GaN self-supported photonic structures consisting in freestanding waveguides
coupled to photonic crystal waveguides and cavities operating in the near-infrared. GaN …

A complete analysis of GaN-based structures with very promising characteristics for future
optical waveguide devices, such as modulators, is presented. First the material growth was …

We demonstrate broadband, low loss optical waveguiding in single crystalline GaN grown
epitaxially on c-plane sapphire wafers through a buffered metal-organic chemical vapor …