Effect of Rapid-Thermal Annealing on Quantum Dot Properties
S Adhikary, S Chakrabarti, S Adhikary… - Quaternary Capped In …, 2018 - Springer
Abstract The InAs/GaAs quantum dots are grown by SK growth method using molecular
beam epitaxy. As-grown defects are always there in samples. Post-growth rapid thermal …
beam epitaxy. As-grown defects are always there in samples. Post-growth rapid thermal …
[图书][B] Quaternary capped In (Ga) As/GaAs quantum dot infrared photodetectors
S Adhikary, S Chakrabarti - 2018 - Springer
In (Ga) As/GaAs quantum-dot infrared photodetectors and focal plane cameras suit
application in areas including space science, military battlefields and medical diagnosis …
application in areas including space science, military battlefields and medical diagnosis …
Thermal peculiarity of AlAs-capped InAs quantum dots in a GaAs matrix
GaAs and AlAs thin capping layers as well as postgrowth rapid thermal annealing (RTA)
were applied to InAs quantum dots (QDs) grown by molecular beam epitaxy to study the …
were applied to InAs quantum dots (QDs) grown by molecular beam epitaxy to study the …
Effects of rapid thermal annealing on device characteristics of InGaAs∕ GaAs quantum dot infrared photodetectors
In this work, rapid thermal annealing was performed on In Ga As∕ Ga As quantum dot
infrared photodetectors (QDIPs) at different temperatures. The photoluminescence showed a …
infrared photodetectors (QDIPs) at different temperatures. The photoluminescence showed a …
Effect of GaP strain compensation layers on rapid thermally annealed InGaAs∕ GaAs quantum dot infrared photodetectors grown by metal-organic chemical-vapor …
The effect of GaP strain compensation layers was investigated on ten-layer In Ga As∕ Ga
As quantum dot infrared photodetectors (QDIPs) grown by metal-organic chemical-vapor …
As quantum dot infrared photodetectors (QDIPs) grown by metal-organic chemical-vapor …
Influence of rapid thermal annealing on a 30 stack InAs/GaAs quantum dot infrared photodetector
K Stewart, M Buda, J Wong-Leung, L Fu… - Journal of Applied …, 2003 - pubs.aip.org
In this article the effect of rapid thermal annealing (RTA) on a 30 stacked InAs/GaAs,
molecular beam epitaxially grown quantum dot infrared photodetector (QDIP) device is …
molecular beam epitaxially grown quantum dot infrared photodetector (QDIP) device is …
Characterization of In0. 5Ga0. 5As quantum dot infrared photodetector (QDIP) structures treated with post-growth processes
We report the modification of the characteristics of quantum dot infrared photodetectors
(QDIPs) by thermal treatment and hydrogen plasma (H-plasma) treatment. H-plasma …
(QDIPs) by thermal treatment and hydrogen plasma (H-plasma) treatment. H-plasma …
A detailed investigation on the impact of post-growth annealing on the materials and device characteristics of 35-layer In0. 50Ga0. 50As/GaAs quantum dot infrared …
S Adhikary, S Chakrabarti - Materials Research Bulletin, 2012 - Elsevier
The effect of post-growth rapid thermal annealing on 35-layer In0. 50Ga0. 50As/GaAs
quantum dot infrared photodetector (QDIP) with quaternary In0. 21Al0. 21Ga0. 58As capping …
quantum dot infrared photodetector (QDIP) with quaternary In0. 21Al0. 21Ga0. 58As capping …
[图书][B] Structural, Optical and Spectral Behaviour of InAs-based Quantum Dot Heterostructures: Applications for High-performance Infrared Photodetectors
S Sengupta, S Chakrabarti - 2017 - books.google.com
This book explores the effects of growth pause or ripening time on the properties of quantum
dots (QDs). It covers the effects of post-growth rapid thermal annealing (RTA) treatment on …
dots (QDs). It covers the effects of post-growth rapid thermal annealing (RTA) treatment on …
Impact of low-temperature cover layer growth of InAs/GaAs quantum dots on their optical properties
S Okumura, K Fujisawa, T Naruke, K Nishi… - Japanese Journal of …, 2022 - iopscience.iop.org
The effect of low-temperature InGaAs/GaAs cover layer growth of InAs quantum dots on their
optical and structural properties was investigated. Photoluminescence intensity depended …
optical and structural properties was investigated. Photoluminescence intensity depended …