In this paper, the development of a soft and selective method to increase the etching rate
and control accurately the etched thickness of Si3N4 material is reported. This technique …

The ability to precisely form Si 3 N 4 spacers is critical to the success of dynamic random-
access memory and NAND (NOT AND) flash memory technology development. In this study …

Silicon nitride spacer etching realization is considered today as one of the most challenging
processes for the fully depleted silicon on insulator devices realization. For this step, the …

We demonstrated a high selective and anisotropic plasma etch of silicon nitride (Si 3 N 4)
and silicon carbide (SiC). The demonstrated process consists of a sequence of ion …

The reactive ion etching (RIE) of silicon nitride (Si3N4) films formed by low pressure
chemical vapor deposition (LPCVD), has been investigated. Studies were done using …

This article proposes an original method to achieve topographically selective etching. It
relies on cycling a two-step process comprising a plasma implantation step and a removal …

The influence of the amount of hydrogen (H) in hydrogenated silicon nitride films (Si x N y: H
z) on the etching properties and etching mechanism are unclear for hydrofluorocarbon …

We investigated the etching behavior of silicon oxide (SiO x) and silicon nitride (SiN x) in
narrow-gap, high-pressure (3.3 kPa) hydrogen (H 2) plasma under various etching …

Plasma atomic layer etching is a dry etching process using a dose step to modify a material's
surface chemistry and an etch step to remove the modified surface layer. This method of …

The process window for the high etching selectivity of silicon nitride to silicon oxide was
investigated in CF 4∕ CH 4 inductively coupled plasma. This work showed that the etching …