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[HTML][HTML] Uprooting defects to enable high-performance III–V optoelectronic devices on silicon

YA Bioud, A Boucherif, M Myronov, A Soltani… - Nature …, 2019 - nature.com
The monolithic integration of III-V compound semiconductor devices with silicon presents
physical and technological challenges, linked to the creation of defects during the deposition …
被引用次数：66 相关文章

Uprooting defects to enable high-performance III–V optoelectronic devices on silicon

YA Bioud, A Boucherif, M Myronov… - Nature …, 2019 - econpapers.repec.org
The monolithic integration of III-V compound semiconductor devices with silicon presents
physical and technological challenges, linked to the creation of defects during the deposition …

Uprooting defects to enable high-performance III-V optoelectronic devices on silicon

YA Bioud, A Boucherif, M Myronov… - Nature …, 2019 - pubmed.ncbi.nlm.nih.gov
The monolithic integration of III-V compound semiconductor devices with silicon presents
physical and technological challenges, linked to the creation of defects during the deposition …
[PDF] core.ac.uk

[PDF][PDF] Uprooting defects to enable high-performance III–V optoelectronic devices on silicon

YA Bioud, A Boucherif, M Myronov, A Soltani… - core.ac.uk
The monolithic integration of III-V compound semiconductor devices with silicon presents
physical and technological challenges, linked to the creation of defects during the deposition …

Uprooting defects to enable high-performance III–V optoelectronic devices on silicon

YA Bioud, A Boucherif, M Myronov, A Soltani… - Nature …, 2019 - ideas.repec.org
The monolithic integration of III-V compound semiconductor devices with silicon presents
physical and technological challenges, linked to the creation of defects during the deposition …

Uprooting defects to enable high-performance III-V optoelectronic devices on silicon.

YA Bioud, A Boucherif, M Myronov, A Soltani… - Nature …, 2019 - europepmc.org
The monolithic integration of III-V compound semiconductor devices with silicon presents
physical and technological challenges, linked to the creation of defects during the deposition …

Uprooting defects to enable high-performance III–V optoelectronic devices on silicon.

YA Bioud, A Boucherif, M Myronov… - Nature …, 2019 - search.ebscohost.com
The monolithic integration of III-V compound semiconductor devices with silicon presents
physical and technological challenges, linked to the creation of defects during the deposition …

[引用][C] Uprooting defects to enable high-performance III–V optoelectronic devices on silicon

Y Bioud, A Boucherif, M Myronov, A Soltani… - 2019 - lilloa.univ-lille.fr
Uprooting defects to enable high-performance III–V optoelectronic devices on silicon
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[PDF] warwick.ac.uk

[PDF][PDF] Uprooting defects to enable high-performance III–V optoelectronic devices on silicon

YA Bioud, A Boucherif, M Myronov, A Soltani… - warwick.ac.uk
The monolithic integration of III-V compound semiconductor devices with silicon presents
physical and technological challenges, linked to the creation of defects during the deposition …

[引用][C] Uprooting defects to enable high-performance III–V optoelectronic devices on silicon

YA Bioud, AA Boucherif, M Myronov, A Soltani… - Nature …, 2019 - hal.science
Uprooting defects to enable high-performance III–V optoelectronic devices on silicon - Archive
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