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A porous Ge/Si interface layer for defect-free III-V multi-junction solar cells on silicon

YA Bioud, MN Beattie, A Boucherif… - Physics, Simulation …, 2019 - spiedigitallibrary.org
III-V solar cell cost reduction and direct III-V/Si integration can both be realized by depositing
a thin layer of high-quality Ge on relatively low-cost Si substrates. However, direct epitaxial …
被引用次数：11 相关文章

A porous Ge/Si interface layer for defect-free III-V multi-junction solar cells on silicon

Y Bioud, M Beattie, A Boucherif, M Jellit, R Stricher - Proc. of SPIE … - spiedigitallibrary.org
ABSTRACT III-V solar cell cost reduction and direct III-V/Si integration can both be realized
by depositing a thin layer of high-quality Ge on relatively low-cost Si substrates. However …

A porous Ge/Si interface layer for defect-free III-V multi-junction solar cells on silicon

YA Bioud, MN Beattie, A Boucherif… - Physics, Simulation …, 2019 - ui.adsabs.harvard.edu
III-V solar cell cost reduction and direct III-V/Si integration can both be realized by depositing
a thin layer of high-quality Ge on relatively low-cost Si substrates. However, direct epitaxial …

[引用][C] A porous Ge/Si interface layer for defect-free III-V multi-junction solar cells on silicon

YA Bioud, MN Beattie, AA Boucherif, R Stricher… - SPIE OPTO, 2019 - hal.science
A porous Ge/Si interface layer for defect-free III-V multi-junction solar cells on silicon - Archive
ouverte HAL Accéder directement au contenu Documentation FR Français (FR) Anglais (EN) …

[引用][C] A porous Ge/Si interface layer for defect-free III-V multi-junction solar cells on silicon

YA Bioud, MN Beattie, A Boucherif, R Stricher… - 2019 - lilloa.univ-lille.fr
A porous Ge/Si interface layer for defect-free III-V multi-junction solar cells on silicon Toggle
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