III-V solar cell cost reduction and direct III-V/Si integration can both be realized by depositing
a thin layer of high-quality Ge on relatively low-cost Si substrates. However, direct epitaxial …

The use promising group III-V materials for photovoltaic applications is hindered by the high
density of threading dislocations when integrated with silicon technology. Here, we present …

The epitaxial integration of high quality III-V semiconductors with Si is of fundamental
interest for photovoltaic devices since Si substrates offer a lighter, stronger, and cost …

Multi-junction solar cell efficiencies far exceed those attainable with silicon photovoltaics;
however, the high cost of materials remains a barrier to their widespread use. Substantial …

Integrating III-Vs onto Si is a promising route toward tandem photovoltaics and cost
mitigation of III-V substrates. While many III-V/Si photovoltaic integration approaches have …

The focus of this dissertation is to systematically investigate heterogeneously integrated III-V
multijunction solar cells on Si substrate. Utilizing a combination of comprehensive solar cell …

Virtual substrates based on thin Ge layers on Si by direct deposition have achieved high
quality recently. Their application to high efficiency III-V solar cells is analyzed in this work …

Virtual substrates based on thin Ge layers on Si substrates by direct deposition have
recently achieved high quality. In this work, their application as low cost, removable …

We investigate the impact of threading dislocation densities on the photovoltaic performance
of single-junction (1J) n+/p GaAs and dual-junction (2J) n+/p InGaP/GaAs solar cells on Si …

With looming energy crisis across the globe, achieving high efficiency and low cost solar
cells have long been the key objective for photovoltaic researchers. III-V compound …