Purpose: f this paper is to is to establish the patterns of oxide formation on the surface of
indium phosphide during electrochemical etching of mono-InP. Design/methodology …

This paper presents the experimental results demonstrating the influence of the doping level
of InP on the porous layer formation on its surface during the electrochemical etching. It is …

Porous semiconductors attract the attention of many researchers due to the relatively simple
technology of obtaining them and possibility of controlling the geometry parameters of the …

Results of the experimental determination of the threshold voltage of pore formation for n-InP
(100) crystals with a charge-carrier density of 2.3× 10 18 cm− 3 are presented. The threshold …

Sažetak In this paper, the technology of synthesis of crystallites and nanocrystallites of nickel
oxide on the surface of indium phosphide is described. This technology consists of two …

This article presents a study of the mechanism of porous space formation on the surface of
single-crystal indium phosphide. The dissolution features of crystals of various types of …

Complex investigation of the layers of porous indium phosphide (por-InP), obtained by
anodic pulsed electrochemical etching of single-crystal n-InP (100) wafers (n∼ 10 18), has …

The work is concerned with complex investigations of the layers of porous indium phosphide
(por-InP) using X-ray diffraction and IR-spectroscopy, ultrasoft X-ray emission spectroscopy …

Purpose: The article proposes a methodology for determining the chemical quality criterion
of porous layers synthesized on the surface of semiconductors, based on taking into account …

The paper describes the effect of the chemical treatment of porous indium phosphide in
sulfide solutions on the photoluminescence spectrum. It was shown that the surface sulfiding …