Engineering dislocations and nanovoids for high-efficiency III–V photovoltaic cells on silicon

YA Bioud, A Boucherif, G Patriarche… - AIP Conference …, 2020 - pubs.aip.org
The use promising group III-V materials for photovoltaic applications is hindered by the high
density of threading dislocations when integrated with silicon technology. Here, we present …
被引用次数：4 相关文章

[引用][C] Engineering dislocations and nanovoids for high-efficiency III–V photovoltaic cells on silicon

Y Bioud, A Boucherif, G Patriarche, D Drouin… - … SYSTEMS (CPV-16), 2020 - hal.science
Engineering dislocations and nanovoids for high-efficiency III–V photovoltaic cells on silicon -
Archive ouverte HAL Accéder directement au contenu Documentation FR Français (FR) …

Engineering dislocations and nanovoids for high-efficiency III-V photovoltaic cells on silicon

YA Bioud, A Boucherif, G Patriarche… - American Institute of …, 2020 - ui.adsabs.harvard.edu
The use promising group III-V materials for photovoltaic applications is hindered by the high
density of threading dislocations when integrated with silicon technology. Here, we present …
[PDF] researchgate.net

[PDF][PDF] Engineering dislocations and nanovoids for high-efficiency III–V photovoltaic cells on silicon

YA Bioud, A Boucherif, G Patriarche - 2020 - researchgate.net
The use promising group III-V materials for photovoltaic applications is hindered by the high
density of threading dislocations when integrated with silicon technology. Here, we present …

Engineering dislocations and nanovoids for high-efficiency III–V photovoltaic cells on silicon

YA Bioud, A Boucherif, G Patriarche… - AIP Conference …, 2020 - pubs.aip.org
The use promising group III-V materials for photovoltaic applications is hindered by the high
density of threading dislocations when integrated with silicon technology. Here, we present …