High-quality germanium epilayers on Si with low threading-dislocation density were
achieved by sintering of porous Ge/Si films. The process consists in the formation of porous …

Abstract By sintering porous Si/Ge films, researchers were able to create high-quality
germanium (Ge) epilayers on silicon (Si) with low threading dislocation density. The …

High-quality germanium epilayers on Si with low threadingdislocation densities are
achieved by self-assembling nanovoids inside the Ge layer. This consists on the formation of …

A low-cost method to reduce the threading disloca-tions density (TDD) in relaxed
germanium (Ge) epilayers grown on silicon (Si) substrates is presented. Ge/Si sub-strate …

Heteroepitaxial films of Ge on Si (001) are receiving wide attention due to several possible
applications in micro-and opto-electronics. Understanding the dynamic behavior of linear …

We show that suitable pit-patterning of a Si (001) substrate can strongly influence the
nucleation and the propagation of dislocations during epitaxial deposition of Si-rich Si 1-x …

A predictive model for the evolution of porous Ge layer upon thermal treatment is reported.
We represent an idealized etched dislocation core as an axially symmetric elongated hole …

Abstract Epitaxial Ge-on-Si possesses a high density of threading dislocations (TDs) due to
the lattice mismatch and difference in thermal expansion coefficient. By employing the lattice …

Nucleation and eventual coalescence of Ge islands, grown out of 5 to 7nm diameter
openings in chemical SiO2 template and epitaxially registered to the underlying Si substrate …

Due to their compatibility with standard Si CMOS technology, Ge (or SiGe) heterostructures
on Si (001) play an important role in modern information and communications technology …