Effect of voided germanium thin-films grown onto silicon substrate on dislocations evolution

MH Hamza, YA Bioud, A Boucherif… - 2021 IEEE 48th …, 2021 - ieeexplore.ieee.org
High-quality germanium (Ge) epilayers on silicon (Si) with low threading dislocation density
were achieved by sintering of porous Si/Ge films. The process consists of the formation of …
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[引用][C] Effect of voided germanium thin-films grown onto silicon substrate on dislocations evolution

M Hamza, Y Bioud, A Boucherif, R Ares… - 2021 IEEE 48th …, 2021 - hal.science
Effect of voided germanium thin-films grown onto silicon substrate on dislocations evolution -
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