MeV-Fe ions implantation of GaAs–Induced morphological and structural modification of porous GaAs

W AL-Khoury, M Naddaf, M Ahmad - … in Physics Research Section B: Beam …, 2021 - Elsevier
Porous GaAs were formed by electrochemical etching of n-type GaAs (1 0 0) substrates
implanted by iron ion beam with energy of 2 MeV at low ion fluence of 7.8× 10+ 13 Fe++/cm …
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MeV-Fe ions implantation of GaAs-Induced morphological and structural modification of porous GaAs

W AL-Khoury, M Naddaf… - Nuclear Instruments and …, 2021 - ui.adsabs.harvard.edu
Porous GaAs were formed by electrochemical etching of n-type GaAs (1 0 0) substrates
implanted by iron ion beam with energy of 2 MeV at low ion fluence of 7.8× 10+ 13 Fe++/cm …